6.7. A thin film of BCC structure (a = 4.28 Å) deposited on a Si substrate (a = 5.43 Å) revealed diffraction peaks at 20 = 42.18°, 52.29°, and 69.08°, when the 0-20 scan was performed with an X-ray beam of λ = 1.54 Å. Then, identify each of the observed peaks.
6.7. A thin film of BCC structure (a = 4.28 Å) deposited on a Si substrate (a = 5.43 Å) revealed diffraction peaks at 20 = 42.18°, 52.29°, and 69.08°, when the 0-20 scan was performed with an X-ray beam of λ = 1.54 Å. Then, identify each of the observed peaks.
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
Transcribed Image Text:6.7. A thin film of BCC structure (a = 4.28 Å) deposited on a Si substrate
(a = 5.43 Å) revealed diffraction peaks at 20 = 42.18°, 52.29º, and
69.08°, when the 0-20 scan was performed with an X-ray beam of
λ = 1.54 Å. Then, identify each of the observed peaks.
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