6.33 A p-type silicon sample is doped at Na = 6 x 10¹5 cm-³. It is determined that EF EF= 0.270 eV. (a) Determine the excess carrier concentration. (b) Find EFi - Ep. (c) (i) Derive the expression for EF EFP. (ii) Find EF EFp. - 1

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Question 10
6.33 Ap-type silicon sample is doped at N₁ = 6 x 10¹5 cm-3. It is determined that Ern -
En = 0.270 eV. (a) Determine the excess carrier concentration. (b) Find EF - Ep.
(c) (i) Derive the expression for Er - EFp. (ii) Find Er - EFp.
Transcribed Image Text:Question 10 6.33 Ap-type silicon sample is doped at N₁ = 6 x 10¹5 cm-3. It is determined that Ern - En = 0.270 eV. (a) Determine the excess carrier concentration. (b) Find EF - Ep. (c) (i) Derive the expression for Er - EFp. (ii) Find Er - EFp.
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