6. Use this information to answer Question 6-8: Consider a one-sided step pn junction made of silicon in which the doping density in the n-side is much greater than that in the p-side, Np >> N4. This junction is under a reverse bias of 10 V. If the doping density, Na, in the p-side is doubled, what would be the percent change in junction capacitance, C? Answers within 5% eror will be considered correct. Enter answer here 7. Also, calculate the change in the built-in potential, o, in unit of V. Answers within 5% error will be considered correct. Enter answer here

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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6. Use this information to answer Question 6-8:
Consider a one-sided step pn junction made of silicon in which the doping density in the n-side is much greater than
that in the p-side, Np >> N4. This junction is under a reverse bias of 10 V. If the doping density, Na, in the p-side
is doubled,
what would be the percent change in junction capacitance, C?
Answers within 5% eror will be considered correct.
Enter answer here
7. Also, calculate the change in the built-in potential, o, in unit of V.
Answers within 5% error will be considered correct.
Enter answer here
Transcribed Image Text:6. Use this information to answer Question 6-8: Consider a one-sided step pn junction made of silicon in which the doping density in the n-side is much greater than that in the p-side, Np >> N4. This junction is under a reverse bias of 10 V. If the doping density, Na, in the p-side is doubled, what would be the percent change in junction capacitance, C? Answers within 5% eror will be considered correct. Enter answer here 7. Also, calculate the change in the built-in potential, o, in unit of V. Answers within 5% error will be considered correct. Enter answer here
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