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6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Calculate electron drift time. (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 10 105 10² GaAs (electrons) 10³ = 300 K - Electrons --Holes 10² Electric field (V/cm) 105 106

6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Calculate electron drift time. (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 10 105 10² GaAs (electrons) 10³ = 300 K - Electrons --Holes 10² Electric field (V/cm) 105 106

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Cal ate the electron drift (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 106 105 10² GaAs (electrons) THULL 10³ T= 300 K - Electrons Holes 104 Electric field (V/cm) 105 10⁰
Transcribed Image Text:6. Consider a Ge PIN photodiode with an intrinsic layer thickness of 50μm. Apply an external bias voltage of 25V. (a) calculate the electric field in the intrinsic layer. (b) Cal ate the electron drift (c) Calculate the hole drift time. Carrier drift velocity (cm/s) 10% 107 106 105 10² GaAs (electrons) THULL 10³ T= 300 K - Electrons Holes 104 Electric field (V/cm) 105 10⁰
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