6.) (Based on Neaman, Problem 7.13) - A particular type of junction is an n region adja- cent to an intrinsic region. This junction can be modeled as an n-type region connected to a lightly doped p-type region. For such a silicon junction at T = 300K with concen- trations N₂ = 10¹6 cm-³ and N₁ = 10¹² cm-³. For zero applied bias: (a) Determine the built-in potential barrier. (b) On which side of the junction does the depletion region mostly lie? On the n side, or on the p side? Explain your reasoning.
6.) (Based on Neaman, Problem 7.13) - A particular type of junction is an n region adja- cent to an intrinsic region. This junction can be modeled as an n-type region connected to a lightly doped p-type region. For such a silicon junction at T = 300K with concen- trations N₂ = 10¹6 cm-³ and N₁ = 10¹² cm-³. For zero applied bias: (a) Determine the built-in potential barrier. (b) On which side of the junction does the depletion region mostly lie? On the n side, or on the p side? Explain your reasoning.
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Transcribed Image Text:6.) (Based on Neaman, Problem 7.13) - A particular type of junction is an n region adja-
cent to an intrinsic region. This junction can be modeled as an n-type region connected
to a lightly doped p-type region. For such a silicon junction at T = 300K with concen-
trations N₁ = 10¹6 cm and Na
10¹2 cm ³. For zero applied bias:
-3
=
(a) Determine the built-in potential barrier.
(b) On which side of the junction does the depletion region mostly lie? On the n side,
or on the p side? Explain your reasoning.
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