*5.137 The BJT in the circuit of Fig. P5.137 has B= 100. (a) Find the dc collector current and the de voltage at the collector. (b) Replacing the transistor by its T model, draw the small- signal equivalent circuit of the amplifier. Analyze the resulting circuit to determine the voltage gain v,/vị.

*5.137 The BJT in the circuit of Fig. P5.137 has B= 100. (a) Find the dc collector current and the de voltage at the collector. (b) Replacing the transistor by its T model, draw the small- signal equivalent circuit of the amplifier. Analyze the resulting circuit to determine the voltage gain v,/vị.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

B= infinity, Assume BJTs are identical. Find R such that a DC current of 0.25mA for transistors Q1 and 2. Find Rc that results in 3V DC at he collectors of Q1 and 2. Find the differential voltage gain.
please include full solutions!!! will give thumbs up if answer has complete solution.
2. In the following two-machine system, the voltages of sending and receiving ends are V₁ = 104/10° (kv) and V₂ = 10020° (kV), respectively. Also, the line impedance is Z = j5 (the line resistance is negligible). a) Calculate the active and reactive powers delivered and received on both sides. b) By adding the series capacitor in this line, we want to increase the amount of transmitted active power by 30%. What capacity do we need for the capacitor? c) We place a phase angle regulator (PAR) in this line so that it injects a voltage of 10 kV vertical to the sending voltage. By using this PAR, what changes in the transmitted power? Ī₁₂ +4 Z=R+jx₁ = |Z|
R₁ VB R₂ www |11 Vcc IB Rc Ic IE RE Design example: Design an emitter stabilised bias circuit as shown to establish a current l = 1mA using a power supply Vcc=12V. The transistor has a nominal h=100.
True or False? For good amplifier design, transistors are biased in the knee part of the IV-Curves. The most fundamental parameter in characterizing the small-signal linear operation of a transistor is the transconductance gm. When a resistance is connected in series with the source (or emitter), the Hybrid-Pi model is the most convenient to use. Discrete-circuit amplifiers predominantly employ MOSFETs while IC amplifiers predominantly uses BJTs. The basic gain cell of IC amplifiers is the CS (CE) amplifier with a current-source load. The MOS current mirror has a current transfer ratio of (W/L)1/(W/L)2. The internal capacitances of the MOSFET and the BJT cause the amplifier gain to rise at high frequencies. The internal MOSFET capacitances that must be considered when evaluating the frequency performance are the gate capacitances and the junction capacitances. Channel modulation causes Id to increase in the saturation mode. When Vgs=Vt, the channel charge beneath the gate is inverted.
Consider the circuit shown below with input v; and output o. What amplifier configuration is this circuit? common base common source common drain common emitter Rc 2 www.
Questions Derive the Vps equation as a function of VGs, for the following MOSFET based amplifier. Please use current equations of MOSFET, as discussed in the class. As per class discussion, we know this circuit can be used as an AC amplifier. Please discuss how can the gain of this AC amplifier, be enhanced. Vp Iny Rp Vps VGs
3 I only need the answer
Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector and emitter. Vcc = 10 volts Rc =1 k2 Rg = 1 k2 VCE GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt. Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector and emitter when the BJT is saturated. a) What is the value of the base current In? Please enter the value expressed in milliamperes (mA) in the box below. For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box. mas-numbas-Iti.ncl.ac.uk Submit part Unanswered b)…
solve
For the common-emitter amplifier shown below in the figure, let Vcc = 15V, R₁ = 27k2, R₂ = 15kQ2, RE = 2.4k2, and Rc = 3.9kQ2. The transistor has ß= 100. Calculate the dc bias current Ic, VCE and identify the operating mode for transistor. If the amplifier operates between a source for which Rsig = 2k2 and a load of 2k2, replace the transistor with its model, and find the values of Rin, Rout including R₁, and the overall voltage gain Vo/Vsig. Please submit your calculations. hig +1₁ = Rin Vcc I in = R₂ ww|11 Rc RE R₁ Va ww11 OF 2/
I need the answer as soon as possible