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5.1 A 0.18-µum fabrication process is specified to have t = 4 nm, μ, = 450 cm²/V-s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ds of 1 k2 at VGS = 1V. Ans. 388 μA/V; 0.93 μm

5.1 A 0.18-µum fabrication process is specified to have t = 4 nm, μ, = 450 cm²/V-s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ds of 1 k2 at VGS = 1V. Ans. 388 μA/V; 0.93 μm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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EXERCISE 5.1 A 0.18-um fabrication process is specified to have t = 4 nm, 14, = 450 cm°V - , and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Iag of 1 k2 at ves = 1 V. Ans. 388 µA/V"; 0.93 µm %3D
Transcribed Image Text:EXERCISE 5.1 A 0.18-um fabrication process is specified to have t = 4 nm, 14, = 450 cm°V - , and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Iag of 1 k2 at ves = 1 V. Ans. 388 µA/V"; 0.93 µm %3D
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