5.1 A 0.18-µum fabrication process is specified to have t = 4 nm, μ, = 450 cm²/V-s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ds of 1 k2 at VGS = 1V. Ans. 388 μA/V; 0.93 μm

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5.1 A 0.18-um fabrication process is specified to have t = 4 nm, 14, = 450 cm°V - , and V, = 0.5 V.
Find the value of the process transconductance parameter k. For a MOSFET with minimum length
fabricated in this process, find the required value of W so that the device exhibits a channel resistance
Iag of 1 k2 at ves = 1 V.
Ans. 388 µA/V"; 0.93 µm
%3D
Transcribed Image Text:EXERCISE 5.1 A 0.18-um fabrication process is specified to have t = 4 nm, 14, = 450 cm°V - , and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance Iag of 1 k2 at ves = 1 V. Ans. 388 µA/V"; 0.93 µm %3D
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