5. For the sample whose energy band diagram is shown in the Figure below: 10.15 eV F 850 μη a. Find the effective electric field for electrons. b. Find the effective electric field for holes. c. Sketch the carrier concentrations. d. Indicate the directions of each of the following: Hole diffusion Hole diffusion current i. 11. 111. Hole drift iv. Hole drift current V. Electron diffusion vi. Electron diffusion current vii. Electron drift viii. Electron drift current ix. Electric field for electrons x. Electric field for holes 0.3 eV t Ec Ef E Ev

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Consider the following circuit diagram. Using practical diode model solve the following items. i. What is the type of rectification in this circuit? ii. Calculate the total peak secondary voltage (Note that “RMS" value is given in the circuit) iii. Sketch the plot of time vs voltage over Load (RL) iv. Find the average voltage over Load. v. Find the maximum current passing over diodes. vi. Find the peak inverse voltage (PIV) over the diodes. vii. Find the minimum fuse current rating for the primary coil. 5:1 D DA 120 V rms D3 D2 RL=10kQ RL out ell lelll

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At 305 °K temperature, the voltage equivalent of temperature of diode is ______________________V. Assume the Boltzmann's constant is 8.62*10-5 eV / K  Answer:

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(b) Determine the peak voltage of the Vs.TM (a) Determine the average voltage of Vo. 5 URM supply voltage, Vs, is a sinusoidal AC signal. The produced output, Vo, is a fluctuating DC signal with ripple peak-to-peak voltage of 1.58 V. Figure B.2 shows a circuit using two silicon diodes with knee voltage of 0.7 V. The UTM UTM S; TM 3 UTM E UTM2:2 DI UTM UTM 50 Hz &UTM UTM 8 UTM 5 UTM TM UTM 50 μ F RL UTM UTM UTM TOTM D, &UTM TM & UTM STM (b) Determine the peak voltage of the Vs. (a) Determine the average voltage of Vo. K UTM Figure B.2 UTM (c) Consider when UTM UTM & UTM waveform of Vo with complete labelling. Ci is removed from the circuit (i.e, open circuit). Draw the FUT O UTM UTM

The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e, the Fermi energy level Ef is constant) is shown in the figure. The valence band E, is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is A. p-type Ef Ev z = 0 z = L If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar is

B9

Indicate a total of 8 factors that determine the breakdown  strength in liquid insulators; Explain by drawing the effect of 'electrode shape and opening' expression on breakdown resistance.