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5. Find the current l in the following circuit. The Diodes D, and D2 are made of silicon diodes and the forward resistance of both the diodes is zero, R1=3 KN. D1 R D2 12 V 6 V Figure:2

5. Find the current l in the following circuit. The Diodes D, and D2 are made of silicon diodes and the forward resistance of both the diodes is zero, R1=3 KN. D1 R D2 12 V 6 V Figure:2

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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5. Find the current I in the following circuit. The Diodes D1 and D2 are made of silicon diodes and the forward resistance of both the diodes is zero, R1=3 KN. D1 R, D2 12 V 6 V Figure:2 6. Calculate built in potential of a germanium PN junction at 300K, if P-side is doped with 5 x 1010 acceptors/cm3 and N-side with 5 1014 donors/cm3, intrinsic carrier de n3D2.5 x 1013 /cm3. [Hint: Vi = Vr x InAXNp1
Transcribed Image Text:5. Find the current I in the following circuit. The Diodes D1 and D2 are made of silicon diodes and the forward resistance of both the diodes is zero, R1=3 KN. D1 R, D2 12 V 6 V Figure:2 6. Calculate built in potential of a germanium PN junction at 300K, if P-side is doped with 5 x 1010 acceptors/cm3 and N-side with 5 1014 donors/cm3, intrinsic carrier de n3D2.5 x 1013 /cm3. [Hint: Vi = Vr x InAXNp1
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