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5. a) How does the potential barrier form in a pn junction form? Describe briefly and show the energy band diagram. b) Consider a GaAs pn junction at T = 300K with Na = 5×1014 cm-³ and Na = 2x1017 cm-³. Intrinsic carrier concentration, n; = 1.8×10°cm-³. Determine the built in potential barrier voltage, Với - If the temperature is increased to T = 400K, what change does take place in Vri - Assume the following parameters: Nc = 4.7×1017cm3 at T = 300K, Ny = 7×1019 cm-3 at T = 300K, Eg = 1.42eV.

5. a) How does the potential barrier form in a pn junction form? Describe briefly and show the energy band diagram. b) Consider a GaAs pn junction at T = 300K with Na = 5×1014 cm-³ and Na = 2x1017 cm-³. Intrinsic carrier concentration, n; = 1.8×10°cm-³. Determine the built in potential barrier voltage, Với - If the temperature is increased to T = 400K, what change does take place in Vri - Assume the following parameters: Nc = 4.7×1017cm3 at T = 300K, Ny = 7×1019 cm-3 at T = 300K, Eg = 1.42eV.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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5. a) How does the potential barrier form in a pn junction form? Describe briefly and show the energy band diagram. b) Consider a GaAs pn junction at T = 300K with Na = 5×1014 cm-³ and Na = 2x1017 cm-³. Intrinsic carrier concentration, n; = 1.8×10°cm-³. Determine the built in potential barrier voltage, Với - If the temperature is increased to T = 400K, what change does take place in Vri - Assume the following parameters: Nc = 4.7×1017cm3 at T = 300K, Ny = 7×1019 cm-3 at T = 300K, Eg = 1.42eV.
Transcribed Image Text:5. a) How does the potential barrier form in a pn junction form? Describe briefly and show the energy band diagram. b) Consider a GaAs pn junction at T = 300K with Na = 5×1014 cm-³ and Na = 2x1017 cm-³. Intrinsic carrier concentration, n; = 1.8×10°cm-³. Determine the built in potential barrier voltage, Với - If the temperature is increased to T = 400K, what change does take place in Vri - Assume the following parameters: Nc = 4.7×1017cm3 at T = 300K, Ny = 7×1019 cm-3 at T = 300K, Eg = 1.42eV.
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