5.) ( A Hall effect device at 300K. The geometry of the device is as follows: d and L= 0.5 cm. The electrical measured current I is fabricated from silicon 0.005 cm, W = 0.05 cm, 0.50 mA, the applied voltage AV 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it points in the negative y-direction. Determine: (a) The Hall voltage (b) Whether the sample is n or p-type. (c) The majority carrier concentration
5.) ( A Hall effect device at 300K. The geometry of the device is as follows: d and L= 0.5 cm. The electrical measured current I is fabricated from silicon 0.005 cm, W = 0.05 cm, 0.50 mA, the applied voltage AV 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it points in the negative y-direction. Determine: (a) The Hall voltage (b) Whether the sample is n or p-type. (c) The majority carrier concentration
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Transcribed Image Text:5.) (
A Hall effect device is fabricated from silicon
at 300K. The geometry of the device is as follows: d= 0.005 cm, W = 0.05 cm,
and L= 0.5 cm. The electrical measured current I = 0.50 mA, the applied voltage
AV = 1.25 V, and the magnetic field (pointing along the thickness direction) has
magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it
points in the negative y-direction. Determine:
(a) The Hall voltage
(b) Whether the sample is n or p-type.
(c) The majority carrier concentration
(d) The majority carrier mobility
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