5.) ( A Hall effect device at 300K. The geometry of the device is as follows: d and L= 0.5 cm. The electrical measured current I is fabricated from silicon 0.005 cm, W = 0.05 cm, 0.50 mA, the applied voltage AV 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it points in the negative y-direction. Determine: (a) The Hall voltage (b) Whether the sample is n or p-type. (c) The majority carrier concentration
5.) ( A Hall effect device at 300K. The geometry of the device is as follows: d and L= 0.5 cm. The electrical measured current I is fabricated from silicon 0.005 cm, W = 0.05 cm, 0.50 mA, the applied voltage AV 1.25 V, and the magnetic field (pointing along the thickness direction) has magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it points in the negative y-direction. Determine: (a) The Hall voltage (b) Whether the sample is n or p-type. (c) The majority carrier concentration
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![5.) (
A Hall effect device is fabricated from silicon
at 300K. The geometry of the device is as follows: d= 0.005 cm, W = 0.05 cm,
and L= 0.5 cm. The electrical measured current I = 0.50 mA, the applied voltage
AV = 1.25 V, and the magnetic field (pointing along the thickness direction) has
magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it
points in the negative y-direction. Determine:
(a) The Hall voltage
(b) Whether the sample is n or p-type.
(c) The majority carrier concentration
(d) The majority carrier mobility](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F11e90924-d8c8-4247-85e9-b29c3b018c51%2Fa06147ca-ab68-4dba-bb03-e189df7b4248%2Fw9u8lt_processed.png&w=3840&q=75)
Transcribed Image Text:5.) (
A Hall effect device is fabricated from silicon
at 300K. The geometry of the device is as follows: d= 0.005 cm, W = 0.05 cm,
and L= 0.5 cm. The electrical measured current I = 0.50 mA, the applied voltage
AV = 1.25 V, and the magnetic field (pointing along the thickness direction) has
magnitude |B| = 0.065 T. The Hall field has magnitude |EH| = 16.5mV/cm, and it
points in the negative y-direction. Determine:
(a) The Hall voltage
(b) Whether the sample is n or p-type.
(c) The majority carrier concentration
(d) The majority carrier mobility
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