•40 For an ideal p-n junction rectifier with a sharp boundary be- tween its two semiconducting sides, the current I is related to the potential difference V across the rectifier by 1 = I,(eVRT – 1), where I, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference V is positive if the rectifier is forward-biased and negative if it is back- biased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing I versus V from -0.12 V to +0.12 V. Take T = 300 K and Io = 5.0 nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.

•40 For an ideal p-n junction rectifier with a sharp boundary be- tween its two semiconducting sides, the current I is related to the potential difference V across the rectifier by 1 = I,(eVRT – 1), where I, which depends on the materials but not on I or V, is called the reverse saturation current. The potential difference V is positive if the rectifier is forward-biased and negative if it is back- biased. (a) Verify that this expression predicts the behavior of a junction rectifier by graphing I versus V from -0.12 V to +0.12 V. Take T = 300 K and Io = 5.0 nA. (b) For the same temperature, calculate the ratio of the current for a 0.50 V forward bias to the current for a 0.50 V back bias.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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