4. Consider the simple biasing circuit shown below. Assume Kn VEQ C. VGG = 10V + R, 5700 ΚΩ REQ www R1 3 300 ΚΩ M1 D RD M1 a. Replace the gate biasing circuit with its Thevenin equivalent, what are VEQ and REQ? 100 ΚΩ RD VDD = 10V = 100 ΚΩ 25μA/V², VTN = 1V. VDD = 10V b. Find the operating point (ID, VDs) for the MOSFET. First assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₁ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)?
4. Consider the simple biasing circuit shown below. Assume Kn VEQ C. VGG = 10V + R, 5700 ΚΩ REQ www R1 3 300 ΚΩ M1 D RD M1 a. Replace the gate biasing circuit with its Thevenin equivalent, what are VEQ and REQ? 100 ΚΩ RD VDD = 10V = 100 ΚΩ 25μA/V², VTN = 1V. VDD = 10V b. Find the operating point (ID, VDs) for the MOSFET. First assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₁ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)?
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Transcribed Image Text:4. Consider the simple biasing circuit shown below. Assume Kn
VEQ
C.
VGG = 10V
+
R, 5700 ΚΩ
REQ
www
R1 3 300 ΚΩ
M1
D
RD
M1
a. Replace the gate biasing circuit with its Thevenin equivalent, what are VEQ and REQ?
100 ΚΩ
RD
VDD = 10V
=
100 ΚΩ
25μA/V², VTN = 1V.
VDD = 10V
b. Find the operating point (ID, VDs) for the MOSFET. First assume a region of operation, then
determine the operating point, then check to make sure the assumption was correct.
Now assume that K₁ decreases by 20% to 20µA/V², what is the effect on the operating point
(IDS, VDS)?
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