4. Calculate IB, Ic & le for the following circuit. The transistor parameters are: ß = 100, and VBE(on) = 0.7V. If the transistor is biased in saturation, assume VCE(sat) = 0.2V. Rc = 4kQ Rg = 220 ΚΩ +10 V +8 V Mw + VBE VCE
4. Calculate IB, Ic & le for the following circuit. The transistor parameters are: ß = 100, and VBE(on) = 0.7V. If the transistor is biased in saturation, assume VCE(sat) = 0.2V. Rc = 4kQ Rg = 220 ΚΩ +10 V +8 V Mw + VBE VCE
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![4. Calculate IB, Ic & LE for the following circuit. The transistor parameters are: B = 100,
and VBE (on) = 0.7V. If the transistor is biased in saturation, assume VCE(sat) = 0.2V.
Rc= 4 kQ
Rg = 220 ΚΩ
+10 V
+8 V owww
IB
+
VBE
+
VCE](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F9328926a-b343-4d47-8a00-cbd9e6e36ac2%2F78b5f3a6-bb0c-4d89-9081-f0d3b6f23d69%2F6hy0u7_processed.jpeg&w=3840&q=75)
Transcribed Image Text:4. Calculate IB, Ic & LE for the following circuit. The transistor parameters are: B = 100,
and VBE (on) = 0.7V. If the transistor is biased in saturation, assume VCE(sat) = 0.2V.
Rc= 4 kQ
Rg = 220 ΚΩ
+10 V
+8 V owww
IB
+
VBE
+
VCE
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