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4. Boron dopant atoms have been added to a silicon sample. Arsenic is a group V element. a. Is this material n-type or p-type? Why? b. Using the information given in the plot below, answer the following: i. What is the Boron concentration for this sample? ii. What is the approximate value of the carrier concentration at 200K? State all assumptions and approximations. What is the approximate electrical conductivity of this material at 200 K, assuming electron and hole mobilities of 4000 and 600 cm²/V-s, respectively. Indicate any data points you use onto the plot (label), and state all assumptions. ii. Temperature ("C) -200 -100 100 200 300 1.2 x 1020 1х 1020 Intrinsic region 8x 109 6х 101° Freeze-out region - Extrinsic region 4 x 1019 2x 10 100 200 300 400 500 600 Temperature (K) Carrier concentration (cm)

4. Boron dopant atoms have been added to a silicon sample. Arsenic is a group V element. a. Is this material n-type or p-type? Why? b. Using the information given in the plot below, answer the following: i. What is the Boron concentration for this sample? ii. What is the approximate value of the carrier concentration at 200K? State all assumptions and approximations. What is the approximate electrical conductivity of this material at 200 K, assuming electron and hole mobilities of 4000 and 600 cm²/V-s, respectively. Indicate any data points you use onto the plot (label), and state all assumptions. ii. Temperature ("C) -200 -100 100 200 300 1.2 x 1020 1х 1020 Intrinsic region 8x 109 6х 101° Freeze-out region - Extrinsic region 4 x 1019 2x 10 100 200 300 400 500 600 Temperature (K) Carrier concentration (cm)

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
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4. Boron dopant atoms have been added to a silicon sample. Arsenic is a group V element. a. Is this material n-type or p-type? Why? b. Using the information given in the plot below, answer the following: i. What is the Boron concentration for this sample? ii. What is the approximate value of the carrier concentration at 200K? State all assumptions and approximations. ii. What is the approximate electrical conductivity of this material at 200 K, assuming electron and hole mobilities of 4000 and 600 cm?/V-s, respectively. Indicate any data points you use onto the plot (label), and state all assumptions. Temperature ("C) -100 -200 100 200 300 1.2 x 1020 1x 1020 Intrinsic region 8 x 1019 6х 1010 Freeze-out region - Extrinsic region - 4 x 1019 2 x 1019 100 200 300 400 500 600 Temperature (K) Carrier concentration (cm)
Transcribed Image Text:4. Boron dopant atoms have been added to a silicon sample. Arsenic is a group V element. a. Is this material n-type or p-type? Why? b. Using the information given in the plot below, answer the following: i. What is the Boron concentration for this sample? ii. What is the approximate value of the carrier concentration at 200K? State all assumptions and approximations. ii. What is the approximate electrical conductivity of this material at 200 K, assuming electron and hole mobilities of 4000 and 600 cm?/V-s, respectively. Indicate any data points you use onto the plot (label), and state all assumptions. Temperature ("C) -100 -200 100 200 300 1.2 x 1020 1x 1020 Intrinsic region 8 x 1019 6х 1010 Freeze-out region - Extrinsic region - 4 x 1019 2 x 1019 100 200 300 400 500 600 Temperature (K) Carrier concentration (cm)
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