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4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV ii. Ec EF = 0.3 eV iii. Ec - EF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for:

4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV ii. Ec EF = 0.3 eV iii. Ec - EF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for:

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Pls help ASAP. Pls show all work and explain thoroughly on what equation is being used and how you come up with the answer. Also, pls underline or square the final answers. 

4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV EF = 0.3 eV ii. Ec iii. EcEF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for: i. EF - Ey = 0.2 eV ii. EF - Ey = 0.3 eV iii. EF - Ey = 0.4 eV
Transcribed Image Text:4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV EF = 0.3 eV ii. Ec iii. EcEF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for: i. EF - Ey = 0.2 eV ii. EF - Ey = 0.3 eV iii. EF - Ey = 0.4 eV
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