4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV ii. Ec EF = 0.3 eV iii. Ec - EF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for:

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4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K.
(a) Calculate the thermal equilibrium electron concentration for:
i. Ec EF = 0.2 eV
EF = 0.3 eV
ii. Ec
iii. EcEF = 0.4 eV
(b) Calculate the thermal equilibrium hole concentration for:
i. EF - Ey = 0.2 eV
ii. EF - Ey = 0.3 eV
iii. EF - Ey = 0.4 eV
Transcribed Image Text:4.) (Based on Neaman, Problem 4.9) Consider silicon at T = 300K. (a) Calculate the thermal equilibrium electron concentration for: i. Ec EF = 0.2 eV EF = 0.3 eV ii. Ec iii. EcEF = 0.4 eV (b) Calculate the thermal equilibrium hole concentration for: i. EF - Ey = 0.2 eV ii. EF - Ey = 0.3 eV iii. EF - Ey = 0.4 eV
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