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4. a. Using the approximate characteristics for the Si diode, determine Vp, ID, and VR for the circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + E 41₁ ID 30 V + VD Si FIG. 2.154 Problem 4. R + 1.5 kΩ VR

4. a. Using the approximate characteristics for the Si diode, determine Vp, ID, and VR for the circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + E 41₁ ID 30 V + VD Si FIG. 2.154 Problem 4. R + 1.5 kΩ VR

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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4. a. Using the approximate characteristics for the Si diode, determine Vp, ID, and VR for the circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + E 41₁ ID 30 V + VD Si FIG. 2.154 Problem 4. R + 1.5 kΩ VR
Transcribed Image Text:4. a. Using the approximate characteristics for the Si diode, determine Vp, ID, and VR for the circuit of Fig. 2.154. b. Perform the same analysis as part (a) using the ideal model for the diode. c. Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good approximation for the actual response under some conditions? + E 41₁ ID 30 V + VD Si FIG. 2.154 Problem 4. R + 1.5 kΩ VR
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