4. (a) Design an ideal silicon p-n junction diode such that Jn = 24 A/cm? and Jp= 6 A/cm² at a forward voltage of 0.7V. Area of cross-section = 2 x 10-4 cm² n; = 9.65 x 10° cm³ Dp = 10 cm²/s Dn = 20 cm²/s Tn = Tp = 5 x 10:7 sec. Hint: Calculate Na and Np. (b) Calculate the total reverse leakage current density at a reverse bias of -4V if Tg = 5 x 107 sec.

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I need answer for 4 question

Nc for Alo.2 Gao.8 As is 5.7 x 1017 cm-3.
Hints:
Refer to figure 30a, page 118 and equations 90a, 90b, 91a and
91b, page 119 of the text book (3rd Ed.)
4.
(a) Design an ideal silicon p-n junction diode such that
Jn = 24 A/cm? and Jp= 6 A/cm? at a forward voltage of 0.7V.
Area of cross-section = 2 x 10-4 cm²
n; = 9.65 x 10° cm³ D, = 10 cm²/s
Dn = 20 cm?/s
Tn = Tp = 5 x 10-7 sec.
Hint: Calculate Na and Np.
(b) Calculate the total reverse leakage current density at a
reverse bias of -4V if Tg = 5 x 107 sec.
5.
Consider a silicon p-n junction with an n-type
concentration of 2 x 1016 cm³ and p-type concentration of
1016 cm 3.
Calculate the minority carrier hole and electron
concentrations at the edges of depletion regions in n-type
and p-type for a forward voltage of 0.5 V.
4 / 4
:::
Transcribed Image Text:Nc for Alo.2 Gao.8 As is 5.7 x 1017 cm-3. Hints: Refer to figure 30a, page 118 and equations 90a, 90b, 91a and 91b, page 119 of the text book (3rd Ed.) 4. (a) Design an ideal silicon p-n junction diode such that Jn = 24 A/cm? and Jp= 6 A/cm? at a forward voltage of 0.7V. Area of cross-section = 2 x 10-4 cm² n; = 9.65 x 10° cm³ D, = 10 cm²/s Dn = 20 cm?/s Tn = Tp = 5 x 10-7 sec. Hint: Calculate Na and Np. (b) Calculate the total reverse leakage current density at a reverse bias of -4V if Tg = 5 x 107 sec. 5. Consider a silicon p-n junction with an n-type concentration of 2 x 1016 cm³ and p-type concentration of 1016 cm 3. Calculate the minority carrier hole and electron concentrations at the edges of depletion regions in n-type and p-type for a forward voltage of 0.5 V. 4 / 4 :::
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