4. (a) Calculate the ideal reverse saturation current density in a silicon p-n junction diode. The parameters of the diode are: NA = 5 x 10¹6 cm³ -3 No = 5 x 10¹6 cm3 n₁ = 9.65 x 109 cm ³ -3 Dn = 21 cm²/sec Dp = 10 cm²/sec Tn = Tp = 5 x 10-7 secs (b) Calculate the generation current density under reverse bias voltage of 5V for the diode in part (a) if Tg = 5 x 10-7 secs. Assume T =300K.

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4.
(a) Calculate the ideal reverse saturation current density in a
silicon p-n junction diode.
The parameters of the diode are:
NA = 5 x 1016 cm3 n = 9.65 x 109 cm3
ND = 5 x 1016 cm3
Dn = 21 cm?/sec
Dp = 10 cm/sec
In = Tp = 5 x 107 secs
%3D
(b) Calculate the generation current density under reverse bias
voltage of 5V for the diode in part (a) if tg = 5 x 10 secs.
Assume T =3OOK.
Hints:
Refer to Example 5, p 103, 104 for part (a)
Refer to example 6, p 105 for part (b)
Transcribed Image Text:4. (a) Calculate the ideal reverse saturation current density in a silicon p-n junction diode. The parameters of the diode are: NA = 5 x 1016 cm3 n = 9.65 x 109 cm3 ND = 5 x 1016 cm3 Dn = 21 cm?/sec Dp = 10 cm/sec In = Tp = 5 x 107 secs %3D (b) Calculate the generation current density under reverse bias voltage of 5V for the diode in part (a) if tg = 5 x 10 secs. Assume T =3OOK. Hints: Refer to Example 5, p 103, 104 for part (a) Refer to example 6, p 105 for part (b)
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