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4 In the full-wave power supply shown in Figure P9.44 the diodes are 1N4001 with a rated peak reverse voltage (also called peak inverse voltage) of 50 V. They are fabricated from silicon. Vune = 170 cos(377t) n = 0.2941 C = 700 µF R1 = 2.5 k2 a. Determine the actual peak reverse voltage across each diode. b. Explain why these diodes are or are not suitable for the specifications given. D4. =RV.

4 In the full-wave power supply shown in Figure P9.44 the diodes are 1N4001 with a rated peak reverse voltage (also called peak inverse voltage) of 50 V. They are fabricated from silicon. Vune = 170 cos(377t) n = 0.2941 C = 700 µF R1 = 2.5 k2 a. Determine the actual peak reverse voltage across each diode. b. Explain why these diodes are or are not suitable for the specifications given. D4. =RV.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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4 In the full-wave power supply shown in Figure P9.44 the diodes are 1N4001 with a rated peak reverse voltage (also called peak inverse voltage) of 50 V. They are fabricated from silicon. Vune = 170 cos(377t) n = 0.2941 C = 700 µF R1 = 2.5 k2 a. Determine the actual peak reverse voltage across each diode. b. Explain why these diodes are or are not suitable for the specifications given. D4. =RV.
Transcribed Image Text:4 In the full-wave power supply shown in Figure P9.44 the diodes are 1N4001 with a rated peak reverse voltage (also called peak inverse voltage) of 50 V. They are fabricated from silicon. Vune = 170 cos(377t) n = 0.2941 C = 700 µF R1 = 2.5 k2 a. Determine the actual peak reverse voltage across each diode. b. Explain why these diodes are or are not suitable for the specifications given. D4. =RV.
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