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35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A A junction barrier potential difference develops in it Holes become the majority carriers in в it The free flow of thermally generated charge carriers through the material is inhibited D

35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A A junction barrier potential difference develops in it Holes become the majority carriers in в it The free flow of thermally generated charge carriers through the material is inhibited D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A junction barrier potential differonce develops in it Holes become the majority carriers in A B it The free flow of thermally generated charge carriers through the material is inhibited D
Transcribed Image Text:35. When a thin slice of silicon is doped with indium or boron atoms It acquires a net positive charge A junction barrier potential differonce develops in it Holes become the majority carriers in A B it The free flow of thermally generated charge carriers through the material is inhibited D
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