= 300 cm²/V. 14.) (Based on Neamen, Problem 10.47) An ideal p-channel MOSFET has p s, a (silicon dioxie) oxide thickness of 400 Å, and a threshold voltage of -0.75 V. When 6 mA. Determine the required W/L VGS = = -5 V, the required current is Ip(sat) ratio to meet these specifications.
= 300 cm²/V. 14.) (Based on Neamen, Problem 10.47) An ideal p-channel MOSFET has p s, a (silicon dioxie) oxide thickness of 400 Å, and a threshold voltage of -0.75 V. When 6 mA. Determine the required W/L VGS = = -5 V, the required current is Ip(sat) ratio to meet these specifications.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Pls help ASAP.
![14.) (Based on Neamen, Problem 10.47) An ideal p-channel MOSFET has p = 300 cm²/V.
s, a (silicon dioxie) oxide thickness of 400 Å, and a threshold voltage of -0.75 V. When
VGS = -5 V, the required current is ID(sat) = 6 mA. Determine the required W/L
ratio to meet these specifications.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F90502412-4b42-4711-a1f0-0436bb4aba86%2F0ca03ce4-623b-4d85-bace-398807e39a9d%2Fzu3t1s_processed.png&w=3840&q=75)
Transcribed Image Text:14.) (Based on Neamen, Problem 10.47) An ideal p-channel MOSFET has p = 300 cm²/V.
s, a (silicon dioxie) oxide thickness of 400 Å, and a threshold voltage of -0.75 V. When
VGS = -5 V, the required current is ID(sat) = 6 mA. Determine the required W/L
ratio to meet these specifications.
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