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3.15 Assume an nMOSFET process in which the mod- ulation parameter A scales with the channel length L according to λ = (0.1μm)/LV-¹, with L in μm. Also, let k' = 50 μA/V². (a) If a particular device has W/L = (10 μm)/ (2 μm) and is driven with Vov = 2 V, find Ip at Vps = 5 V and at Vps = 10 V. What is the value of r? DS (b) Repeat part (a) if both W and L are doubled. (c) Repeat part (a) if both W and L are halved. (d) Specify W and L so that with Voy = 1 V the device gives IDEOS) = 1 mA and has r =

3.15 Assume an nMOSFET process in which the mod- ulation parameter A scales with the channel length L according to λ = (0.1μm)/LV-¹, with L in μm. Also, let k' = 50 μA/V². (a) If a particular device has W/L = (10 μm)/ (2 μm) and is driven with Vov = 2 V, find Ip at Vps = 5 V and at Vps = 10 V. What is the value of r? DS (b) Repeat part (a) if both W and L are doubled. (c) Repeat part (a) if both W and L are halved. (d) Specify W and L so that with Voy = 1 V the device gives IDEOS) = 1 mA and has r =

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3. 15
3.15 Assume an nMOSFET process in which the mod- ulation parameter A scales with the channel length L according to λ = (0.1μm)/LV-¹1, with L in um. Also, let k' = 50 μA/V². (a) If a particular device has W/L = (10 μm)/ (2 μm) and is driven with Voy = 2 V, find Ip at VDs = 5 V and at Vps = 10 V. What is the value of r? (b) Repeat part (a) if both W and L are doubled. (c) Repeat part (a) if both W and L are halved. (d) Specify W and L so that with Voy = 1 V the device gives ID(EOS) = 1 mA and has r 100 ΚΩ. =
Transcribed Image Text:3.15 Assume an nMOSFET process in which the mod- ulation parameter A scales with the channel length L according to λ = (0.1μm)/LV-¹1, with L in um. Also, let k' = 50 μA/V². (a) If a particular device has W/L = (10 μm)/ (2 μm) and is driven with Voy = 2 V, find Ip at VDs = 5 V and at Vps = 10 V. What is the value of r? (b) Repeat part (a) if both W and L are doubled. (c) Repeat part (a) if both W and L are halved. (d) Specify W and L so that with Voy = 1 V the device gives ID(EOS) = 1 mA and has r 100 ΚΩ. =
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