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3.10 An NMOS device has parameters VrN =0.8 V, L =0.8 um, and = 120 uA/V. When the transistor is biased in the saturation region with Vas = 1.4 V, the drain curent is Ip = 0.6 mA. (a) What is the channel width W? (b) Determine the drain current when Vps = 0.4 V. (c) What value of Vps puts the device at the edge of saturation?

3.10 An NMOS device has parameters VrN =0.8 V, L =0.8 um, and = 120 uA/V. When the transistor is biased in the saturation region with Vas = 1.4 V, the drain curent is Ip = 0.6 mA. (a) What is the channel width W? (b) Determine the drain current when Vps = 0.4 V. (c) What value of Vps puts the device at the edge of saturation?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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**Problem 3.10:** An NMOS device has parameters \( V_{TN} = 0.8 \, V \), \( L = 0.8 \, \mu m \), and \( k_n' = 120 \, \mu A/V^2 \). When the transistor is biased in the saturation region with \( V_{GS} = 1.4 \, V \), the drain current is \( I_D = 0.6 \, mA \). (a) What is the channel width \( W \)? (b) Determine the drain current when \( V_{DS} = 0.4 \, V \). (c) What value of \( V_{DS} \) puts the device at the edge of saturation?
Transcribed Image Text:**Problem 3.10:** An NMOS device has parameters \( V_{TN} = 0.8 \, V \), \( L = 0.8 \, \mu m \), and \( k_n' = 120 \, \mu A/V^2 \). When the transistor is biased in the saturation region with \( V_{GS} = 1.4 \, V \), the drain current is \( I_D = 0.6 \, mA \). (a) What is the channel width \( W \)? (b) Determine the drain current when \( V_{DS} = 0.4 \, V \). (c) What value of \( V_{DS} \) puts the device at the edge of saturation?
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