3. Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 10" cm" while the n-type Si is doped to 5x 10" cm. All plots should assume the p-type is on the left side. (a) Draw the energy band diagram at zero bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vas and built-in voltage Va. Preserve the x, and x- relative scaling from question 2. (b) Draw the energy band diagram at forward bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vass and built-in voltage Vs. Take into account the change in xe and x- from part (a). Make sure the forward bias can turn on the diode, i.e. "0.6 V. (c) Draw the energy band diagram at reverse bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vare and built-in voltage Va. Take into account the change in x, and x. from part (a). Use a reverse voitage that is roughly three times larger than the bandgap.

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3. Suppose we have a pn junction that is slightiy asymmetric. The p-type Si is doped to 10" cm* while
the n-type Si is doped to 5x 10" cm. All plots should assume the p-type is on the left side.
(a) Draw the energy band diagram at zero bias. Label the Fermi level difference and the band
bending height in terms of applied voltage Vas and built-in voltage Va. Preserve the x, and x-
relative scaling from question 2.
(b) Draw the energy band diagram at forward bias. Label the Fermi level difference and the band
bending height in terms of applied voltage Va and built-in voltage Va. Take into account the
change in xe and x- from part (a). Make sure the forward bias can turn on the diode, i.e. "0.6 V.
(c) Draw the energy band diagram at reverse bias. Label the Fermi level difference and the band
bending height in terms of applied voltage Vae and built-in voltage V. Take into account the
change in x, and x- from part (a). Use a reverse voltage that is roughly three times larger than
the bandgap.
Transcribed Image Text:3. Suppose we have a pn junction that is slightiy asymmetric. The p-type Si is doped to 10" cm* while the n-type Si is doped to 5x 10" cm. All plots should assume the p-type is on the left side. (a) Draw the energy band diagram at zero bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vas and built-in voltage Va. Preserve the x, and x- relative scaling from question 2. (b) Draw the energy band diagram at forward bias. Label the Fermi level difference and the band bending height in terms of applied voltage Va and built-in voltage Va. Take into account the change in xe and x- from part (a). Make sure the forward bias can turn on the diode, i.e. "0.6 V. (c) Draw the energy band diagram at reverse bias. Label the Fermi level difference and the band bending height in terms of applied voltage Vae and built-in voltage V. Take into account the change in x, and x- from part (a). Use a reverse voltage that is roughly three times larger than the bandgap.
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