-3 A GaAs pn junction at 300 K is doped with N = 1x10 cm doners in the n-side, Na = 1x101 cm 3 C, at a reverse bias voltage of V = 4 V, the junction capacitance will acceptors in the p-side, and has an area of 1x10 be: 2.675e-14 F/cm O 2.104e-12 F/cm O 1493e-13 F/cm 4.270e-11 F/cm O 1.349e-14 F/cm
-3 A GaAs pn junction at 300 K is doped with N = 1x10 cm doners in the n-side, Na = 1x101 cm 3 C, at a reverse bias voltage of V = 4 V, the junction capacitance will acceptors in the p-side, and has an area of 1x10 be: 2.675e-14 F/cm O 2.104e-12 F/cm O 1493e-13 F/cm 4.270e-11 F/cm O 1.349e-14 F/cm
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Transcribed Image Text:A GaAs pn junction at 300 K is doped with N = 1x10 cm
doners in the
n-side, N = 1x10 Cmm 3
, at a reverse bias voltage of V = 4 V, the junction capacitance vill
-4
acceptors in the p-side, and has an area of 1x10
CME
be:
2.675e-14 F/cm
O 2.104e-12 F/cm
O 1493e-13 F/cm
4.270e-11 F/cm
O 1.349e-14 F/cm
Transcribed Image Text:: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 x 10-34 Js
Si
Ge
-31
9.11 x 10
Kg
mo
E, (eV)
ni (cm-3)
Hn (cm2/V – s)
Hp (cm2/V – s)
Ne (cm-3)
No (cm 3)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10
19
C
1500
3900
8500
-12
8.85 x 10
F/m
Eo
450
1900
400
-34
1.05 x 10
J- s
2.78 x 1019 1.04 x 1019 4.45 x 1017
8.6 x 10-5 eV/K
26 mV (T = 300 K)
26 meV (T = 300 K)
3 x 108 m/s
K
9.84 x 1018
6 x 1018
7.72 x 1018
KT/q
m /m.
0.082
0.98
0.067
KT
m/m.
Er (F/m)
0.28
0.49
0.45
11.7
16
13.1
nair = 1
= 3.66
Some useful relations
E9ALGA1- As (x) = 1.424 + 1.247x
EgIn Ga1-As (T) = 0.36 + 1.064x
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm2
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