2MQ 2MQ www. Part a) 12= Prov Part b) Part c) Assuming the PMOS is biased in the Saturation Region, and given that: Vtp=-1V, kp=75 μA/V2, L=0.2μm, W-2μm, and λ = 0 VDD = +9V 2 2.25 9 1 수 + + ÷ 1kQ RD Calculate the value of I ◆ VG= Provide an explanation of your answer here: xplanation of your answer here: Calculate the value of VG Vs= + Provide an explanation of your answer here: Assuming that VSG=3V, then calculate the value of Vs + 수 Part d) ID= Provide an explanation of your answer here: Assuming that VSG= 3V, then calculate the value of Ip Part eft. at the edge of saturation, then calculate the value of Rp Rp= Provide an explanation of your answer here: Assuming that VSG = 3V, Is=1.5mA, and the transistor is operating

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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2MQ
2MQ
WW
Part a)
1₂=
Provi
Part b)
Part c)
VDD = +9V
Assuming the PMOS is biased in the Saturation Region, and given that:
Vtp=-1V, kp=75 μA/V², L-0.2μm, W-2μm, and λ = 0
Calculate the value of 1₂
2
2.25
9
1
+
#
WW
1kQ
RD
xplanation of your answer here:
VG =
Provide an explanation of your answer here:
Calculate the value of VG
→
Assuming that VSG=3V, then calculate the value of Vs
Vs= +
Provide an explanation of your answer here:
Part d)
ID=
Provide an explanation of your answer here:
+
Assuming that VSG= 3V, then calculate the value of In
Part eft.
Assuming that VSG = 3V, Is= 1.5mA, and the transistor is operating
at the edge of saturation, then calculate the value of RD
RD=
Provide an explanation of your answer here:
Transcribed Image Text:2MQ 2MQ WW Part a) 1₂= Provi Part b) Part c) VDD = +9V Assuming the PMOS is biased in the Saturation Region, and given that: Vtp=-1V, kp=75 μA/V², L-0.2μm, W-2μm, and λ = 0 Calculate the value of 1₂ 2 2.25 9 1 + # WW 1kQ RD xplanation of your answer here: VG = Provide an explanation of your answer here: Calculate the value of VG → Assuming that VSG=3V, then calculate the value of Vs Vs= + Provide an explanation of your answer here: Part d) ID= Provide an explanation of your answer here: + Assuming that VSG= 3V, then calculate the value of In Part eft. Assuming that VSG = 3V, Is= 1.5mA, and the transistor is operating at the edge of saturation, then calculate the value of RD RD= Provide an explanation of your answer here:
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