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27.4 One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) into crystalline silicon to make an n-type semiconductor. This P- doped layer needs to be at least 0.467 μm into the 200-μm thick wafer. The present diffusion process is carried out at 1000 C. Data for the total amount of phosphorous atoms loaded into the silicon wafer vs. time at 1000 C are presented in the figure below. The maximum solubility of phosphorous within crystal- line silicon is 1.0 102¹ P atoms/cm³ at 1000 C. The square silicon wafer has a surface area of 100 cm² (10 cm/side). Initially, there is no phosphorous impurity in the crystalline silicon. What is the concentration of P atoms (atoms P/cm³) doped into the silicon at a depth of 0.467 um after 40 min, based on the data provided?

27.4 One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) into crystalline silicon to make an n-type semiconductor. This P- doped layer needs to be at least 0.467 μm into the 200-μm thick wafer. The present diffusion process is carried out at 1000 C. Data for the total amount of phosphorous atoms loaded into the silicon wafer vs. time at 1000 C are presented in the figure below. The maximum solubility of phosphorous within crystal- line silicon is 1.0 102¹ P atoms/cm³ at 1000 C. The square silicon wafer has a surface area of 100 cm² (10 cm/side). Initially, there is no phosphorous impurity in the crystalline silicon. What is the concentration of P atoms (atoms P/cm³) doped into the silicon at a depth of 0.467 um after 40 min, based on the data provided?

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
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27.4 One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) into crystalline silicon to make an n-type semiconductor. This P- doped layer needs to be at least 0.467 µm into the 200-μm thick wafer. The present diffusion process is carried out at 1000 C. Data for the total amount of phosphorous atoms loaded into the silicon wafer vs. time at 1000 C are presented in the figure below. The maximum solubility of phosphorous within crystal- line silicon is 1.0 10²¹ P atoms/cm³ at 1000 C. The square silicon wafer has a surface area of 100 cm² (10 cm/side). Initially, there is no phosphorous impurity in the crystalline silicon. What is the concentration of P atoms (atoms P/cm³) doped into the silicon at a depth of 0.467 µm after 40 min, based on the data provided? ma(t) (total atoms P in silicon) 6.0E+18 5.0E+18 4.0E+18 3.0E+18 2.0E+18 1.0E+18 0.0E+00 0 20 40 60 t1/2 (sec) ¹1/2 80 100
Transcribed Image Text:27.4 One step of the manufacturing of silicon solar cells is the molecular diffusion (doping) of elemental phosphorous (P) into crystalline silicon to make an n-type semiconductor. This P- doped layer needs to be at least 0.467 µm into the 200-μm thick wafer. The present diffusion process is carried out at 1000 C. Data for the total amount of phosphorous atoms loaded into the silicon wafer vs. time at 1000 C are presented in the figure below. The maximum solubility of phosphorous within crystal- line silicon is 1.0 10²¹ P atoms/cm³ at 1000 C. The square silicon wafer has a surface area of 100 cm² (10 cm/side). Initially, there is no phosphorous impurity in the crystalline silicon. What is the concentration of P atoms (atoms P/cm³) doped into the silicon at a depth of 0.467 µm after 40 min, based on the data provided? ma(t) (total atoms P in silicon) 6.0E+18 5.0E+18 4.0E+18 3.0E+18 2.0E+18 1.0E+18 0.0E+00 0 20 40 60 t1/2 (sec) ¹1/2 80 100
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