24.9 Tetrachlorosilane (SiCl4) gas is reacted with hydrogen gas (H2) to produce electronic-grade polycrystalline silicon at 800 C and 1.5 × 105 Pa according to the reaction equation: SiCl4(g) + 2H2(g) →> Si(s) + 4HCl(g). The reaction rate may experience diffusion limitations at the growing Si solid surface. To address this concern, the diffusion coefficient coefficients in this system must be estimated. a. Estimate the binary diffusion coefficient of SiCl4 in H2 gas. b. Estimate the diffusion coefficient of SiCl4 in a mixture con- taining 40 mole% SiCl4, 40 mole% H2, and 20 mole% HCl. Is this diffusion coefficient substantively different than the diffusion coefficient estimated in part (a)? The Lennard-Jones parameters for SiCl4 are σ = 5.08 Å and e/k = 358 K.
24.9 Tetrachlorosilane (SiCl4) gas is reacted with hydrogen gas (H2) to produce electronic-grade polycrystalline silicon at 800 C and 1.5 × 105 Pa according to the reaction equation: SiCl4(g) + 2H2(g) →> Si(s) + 4HCl(g). The reaction rate may experience diffusion limitations at the growing Si solid surface. To address this concern, the diffusion coefficient coefficients in this system must be estimated. a. Estimate the binary diffusion coefficient of SiCl4 in H2 gas. b. Estimate the diffusion coefficient of SiCl4 in a mixture con- taining 40 mole% SiCl4, 40 mole% H2, and 20 mole% HCl. Is this diffusion coefficient substantively different than the diffusion coefficient estimated in part (a)? The Lennard-Jones parameters for SiCl4 are σ = 5.08 Å and e/k = 358 K.
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Transcribed Image Text:24.9 Tetrachlorosilane (SiCl4) gas is reacted with hydrogen gas
(H2) to produce electronic-grade polycrystalline silicon at 800 C
and 1.5 × 105 Pa according to the reaction equation:
SiCl4(g) + 2H2(g) →>
Si(s) + 4HCl(g).
The reaction rate may experience diffusion limitations at the
growing Si solid surface. To address this concern, the diffusion
coefficient coefficients in this system must be estimated.
a. Estimate the binary diffusion coefficient of SiCl4 in H2 gas.
b. Estimate the diffusion coefficient of SiCl4 in a mixture con-
taining 40 mole% SiCl4, 40 mole% H2, and 20 mole% HCl.
Is this diffusion coefficient substantively different than the
diffusion coefficient estimated in part (a)? The Lennard-Jones
parameters for SiCl4 are σ = 5.08 Å and e/k = 358 K.
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