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2.5 V Q M1 LS1 2.5 V O м. 4 OY OY 8.88 4.44 м, 44 M, 3.33 8.88 6.66 M, 4.44 Ma 44 во- BO Ma 6.66 (a) (b) Figure 6.30 (a) NMOS implementation of Y = AB + CDB or Y = (A+ CD)B; (b) an alternate transistor sizing for th logic gate in (a).

2.5 V Q M1 LS1 2.5 V O м. 4 OY OY 8.88 4.44 м, 44 M, 3.33 8.88 6.66 M, 4.44 Ma 44 во- BO Ma 6.66 (a) (b) Figure 6.30 (a) NMOS implementation of Y = AB + CDB or Y = (A+ CD)B; (b) an alternate transistor sizing for th logic gate in (a).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Scale the transistor sizes  to decrease the gate power by a factor of 8. (b) Scale the
transistor sizes  to increase the gate
power by a factor of 3.5.

2.5 V Q M1 LS1 2.5 V O м. 4 OY OY 8.88 4.44 м, 44 M, 3.33 8.88 6.66 M, 4.44 Ma 44 во- BO Ma 6.66 (a) (b) Figure 6.30 (a) NMOS implementation of Y = AB + CDB or Y = (A+ CD)B; (b) an alternate transistor sizing for th logic gate in (a).
Transcribed Image Text:2.5 V Q M1 LS1 2.5 V O м. 4 OY OY 8.88 4.44 м, 44 M, 3.33 8.88 6.66 M, 4.44 Ma 44 во- BO Ma 6.66 (a) (b) Figure 6.30 (a) NMOS implementation of Y = AB + CDB or Y = (A+ CD)B; (b) an alternate transistor sizing for th logic gate in (a).
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