2. Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 10" cm* while the n-type Si is doped to 5x 10" cm. All plots should assume the p-type is on the left side. (a) Plot depletion region charge densities. Label local extrema. Label the depletion region edges on the p side and the n side as x, and x, respectively. Try to drawx, and x, to scale relative to each other. n (cm³) x [um] (b) Plot electric field; positive values mean pointing to the right. Label local extrema. Label the depletion region edges on the p side and the n side as x, and xa, respectively. Try to draw x, and X, to scale relative to each other. E (V/cm] x (um) (c) Plot electric potential, assuming the p-type is grounded, not the n-type. Label local extrema. Label the depletion region edges on the p side and the n side as x, and xa, respectively. Try to draw x, and x. to scale relative to each other. V [V] x [um]
2. Suppose we have a pn junction that is slightly asymmetric. The p-type Si is doped to 10" cm* while the n-type Si is doped to 5x 10" cm. All plots should assume the p-type is on the left side. (a) Plot depletion region charge densities. Label local extrema. Label the depletion region edges on the p side and the n side as x, and x, respectively. Try to drawx, and x, to scale relative to each other. n (cm³) x [um] (b) Plot electric field; positive values mean pointing to the right. Label local extrema. Label the depletion region edges on the p side and the n side as x, and xa, respectively. Try to draw x, and X, to scale relative to each other. E (V/cm] x (um) (c) Plot electric potential, assuming the p-type is grounded, not the n-type. Label local extrema. Label the depletion region edges on the p side and the n side as x, and xa, respectively. Try to draw x, and x. to scale relative to each other. V [V] x [um]
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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![**Exercise on Semiconductor Physics: Analyzing a p-n Junction**
**Problem Statement:**
Suppose we have a p-n junction that is slightly asymmetric. The p-type Silicon (Si) is doped to \(10^{14} \, \text{cm}^{-3}\) while the n-type Si is doped to \(5 \times 10^{17} \, \text{cm}^{-3}\). All plots should assume the p-type is on the left side.
(a) **Depletion Region Charge Densities Plot:**
- Graph: A graph with the y-axis labeled \( n \, [\text{cm}^{-3}] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the depletion region charge densities. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
(b) **Electric Field Plot:**
- Graph: A graph with the y-axis labeled \( E \, [V/\text{cm}] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the electric field. Positive values should mean pointing to the right. Label local extrema. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
(c) **Electric Potential Plot:**
- Graph: A graph with the y-axis labeled \( V \, [V] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the electric potential, assuming the p-type is grounded, not the n-type. Label local extrema. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
**Task:**
For each plot, focus on the accurate representation of the depletion region parameters and ensure the scales are appropriately set to visualize the asymmetry in the doping concentrations.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fa8223718-ad77-4d6b-bd82-369981d6fd7b%2F383b1e8d-f139-4e40-ba4c-db8c2f855220%2Flulspvo_processed.png&w=3840&q=75)
Transcribed Image Text:**Exercise on Semiconductor Physics: Analyzing a p-n Junction**
**Problem Statement:**
Suppose we have a p-n junction that is slightly asymmetric. The p-type Silicon (Si) is doped to \(10^{14} \, \text{cm}^{-3}\) while the n-type Si is doped to \(5 \times 10^{17} \, \text{cm}^{-3}\). All plots should assume the p-type is on the left side.
(a) **Depletion Region Charge Densities Plot:**
- Graph: A graph with the y-axis labeled \( n \, [\text{cm}^{-3}] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the depletion region charge densities. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
(b) **Electric Field Plot:**
- Graph: A graph with the y-axis labeled \( E \, [V/\text{cm}] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the electric field. Positive values should mean pointing to the right. Label local extrema. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
(c) **Electric Potential Plot:**
- Graph: A graph with the y-axis labeled \( V \, [V] \) and the x-axis labeled \( x \, [\mu \text{m}] \).
- Instructions: Plot the electric potential, assuming the p-type is grounded, not the n-type. Label local extrema. Identify the depletion region edges on the p side and the n side as \( x_p \) and \( x_n \), respectively. Try to draw \( x_p \) and \( x_n \) to scale relative to each other.
**Task:**
For each plot, focus on the accurate representation of the depletion region parameters and ensure the scales are appropriately set to visualize the asymmetry in the doping concentrations.
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