2. Shown below is a chart of the carrier concentration in three intrinsic semiconductors (Si, Ge, and GaAs) as a function of the temperature. 600°C 400°C 2000°C 27°C 0°C 1018 2410 cm 1015- Ge 1012 1.45x101 cm 10 Si 106- 2.1x10 cm" GaA 103- 1.5 2 2.5 3 3.5 1000/T (1/K) a. Assuming the electron mobility is constant, which one do you expect to show the largest conductivity at room temperature? b. Based on the chart, how do you expect the band gap to change across the Si-Ge-GaAs series? Intrinsic Concentration (cm 3)

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Chapter1: Chemical Foundations
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2. Shown below is a chart of the carrier concentration in three intrinsic semiconductors (Si,
Ge, and GaAs) as a function of the temperature.
600°C 400°C 20o0°C
27°C Q°C
1018
2.4x10 cm
1015
Ge
1012-
1.45x1010 cm
10
Si
106-
2.110° cm"
GaA
103
1.5
2.5
3.5
1000/T (1/K)
a. Assuming the electron mobility is constant, which one do you expect to show the largest
conductivity at room temperature? ,
b. Based on the chart, how do you expect the band gap to change across the Si-Ge-GaAs
series?
Intrinsic Concentration (cm-3)
Transcribed Image Text:2. Shown below is a chart of the carrier concentration in three intrinsic semiconductors (Si, Ge, and GaAs) as a function of the temperature. 600°C 400°C 20o0°C 27°C Q°C 1018 2.4x10 cm 1015 Ge 1012- 1.45x1010 cm 10 Si 106- 2.110° cm" GaA 103 1.5 2.5 3.5 1000/T (1/K) a. Assuming the electron mobility is constant, which one do you expect to show the largest conductivity at room temperature? , b. Based on the chart, how do you expect the band gap to change across the Si-Ge-GaAs series? Intrinsic Concentration (cm-3)
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