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2. Quantum mechanical tunneling is not just the basis for STM but also for electronic devices like quantum well lasers and resonant tunneling diodes. Your flash memory devices like USB keys use quantum tunneling to erase data. As miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) continues, unwanted electron tunneling has become a problem. Electronic barriers that were once thick enough to block current are now as thin as 1 nanometer. An electron having a total energy of E = 4.5 eV approaches a 0.50 nm thick metal oxide film acting as a potential energy barrier with Vo =5 eV. Calculate the change in the transmission probability if the thickness of the barrier is increased to 0.8 nm and then to 1.5 nm.

2. Quantum mechanical tunneling is not just the basis for STM but also for electronic devices like quantum well lasers and resonant tunneling diodes. Your flash memory devices like USB keys use quantum tunneling to erase data. As miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) continues, unwanted electron tunneling has become a problem. Electronic barriers that were once thick enough to block current are now as thin as 1 nanometer. An electron having a total energy of E = 4.5 eV approaches a 0.50 nm thick metal oxide film acting as a potential energy barrier with Vo =5 eV. Calculate the change in the transmission probability if the thickness of the barrier is increased to 0.8 nm and then to 1.5 nm.

Question
2. Quantum mechanical tunneling is not just the basis for STM but also for electronic devices like quantum well lasers and resonant tunneling diodes. Your flash memory devices like USB keys use quantum tunneling to erase data. As miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) continues, unwanted electron tunneling has become a problem. Electronic barriers that were once thick enough to block current are now as thin as 1 nanometer. An electron having a total energy of E = 4.5 eV approaches a 0.50 nm thick metal oxide film acting as a potential energy barrier with Vo =5 eV. Calculate the change in the transmission probability if the thickness of the barrier is increased to 0.8 nm and then to 1.5 nm.
Transcribed Image Text:2. Quantum mechanical tunneling is not just the basis for STM but also for electronic devices like quantum well lasers and resonant tunneling diodes. Your flash memory devices like USB keys use quantum tunneling to erase data. As miniaturization of metal-oxide-semiconductor field-effect transistors (MOSFET) continues, unwanted electron tunneling has become a problem. Electronic barriers that were once thick enough to block current are now as thin as 1 nanometer. An electron having a total energy of E = 4.5 eV approaches a 0.50 nm thick metal oxide film acting as a potential energy barrier with Vo =5 eV. Calculate the change in the transmission probability if the thickness of the barrier is increased to 0.8 nm and then to 1.5 nm.
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