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2. A silicon sample is oxidized in dry O₂ at 1200°C for one hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.1 um more oxide in wet O₂ at 1200°C?

2. A silicon sample is oxidized in dry O₂ at 1200°C for one hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.1 um more oxide in wet O₂ at 1200°C?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1. Assuming that a silicon oxide layer of thickness x is grown by thermal oxidation, show that the thickness of silicon being consumed is 0.44x. The molecular weight of Si is 28.9 g/mol, and the density of Si is 2.33 gm/cm³. The corresponding values for SiO₂ are 60.08 g/mol and 2.21 g/cm³. 2. A silicon sample is oxidized in dry O₂ at 1200°C for one hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.1 µm more oxide in wet O₂ at 1200°C?
Transcribed Image Text:1. Assuming that a silicon oxide layer of thickness x is grown by thermal oxidation, show that the thickness of silicon being consumed is 0.44x. The molecular weight of Si is 28.9 g/mol, and the density of Si is 2.33 gm/cm³. The corresponding values for SiO₂ are 60.08 g/mol and 2.21 g/cm³. 2. A silicon sample is oxidized in dry O₂ at 1200°C for one hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.1 µm more oxide in wet O₂ at 1200°C?
4. Calculate the Al average etch rate and etch rate uniformity on a 200-mm-diameter silicon wafer, assuming that the etch rates at the center, left, right, top, and bottom of the wafer are 750, 812, 765, 743, and 798 nm/min, respectively. 5. The electron densities in RIE and HDP systems range between 10⁹-10¹0 and 10¹1¹-10¹2 cm³, respectively. Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate the ionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is the ratio of the electron density to the density of molecules.
Transcribed Image Text:4. Calculate the Al average etch rate and etch rate uniformity on a 200-mm-diameter silicon wafer, assuming that the etch rates at the center, left, right, top, and bottom of the wafer are 750, 812, 765, 743, and 798 nm/min, respectively. 5. The electron densities in RIE and HDP systems range between 10⁹-10¹0 and 10¹1¹-10¹2 cm³, respectively. Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate the ionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is the ratio of the electron density to the density of molecules.
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