1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.
1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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![1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA =
4.5 x 1016 / cm³ and Np = 5.6 x 1017/ cm³. Value of n¡ at T = 300 K is 1.5 × 1010 / cm³ . Calculate
%3D
(i) built in potential Vbi
(ii) total depletion width W in µm
(iii) the depletion capacitance in F/cm?
For the equations, look for relevant equations from the textbook.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F267dad58-2851-4065-bbb7-8d9119ab594d%2Fe4973b2d-9f20-44b4-8aab-c4175ec5861d%2Fs4peyen_processed.png&w=3840&q=75)
Transcribed Image Text:1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA =
4.5 x 1016 / cm³ and Np = 5.6 x 1017/ cm³. Value of n¡ at T = 300 K is 1.5 × 1010 / cm³ . Calculate
%3D
(i) built in potential Vbi
(ii) total depletion width W in µm
(iii) the depletion capacitance in F/cm?
For the equations, look for relevant equations from the textbook.
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