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1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.

1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017 / cm³. Value of n; at T = 300 K is 1.5 × 1010 / cm³ . Calculate (i) built in potential Vbi (ii) total depletion width W in um (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017/ cm³. Value of n¡ at T = 300 K is 1.5 × 1010 / cm³ . Calculate %3D (i) built in potential Vbi (ii) total depletion width W in µm (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.
Transcribed Image Text:1(b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA = 4.5 x 1016 / cm³ and Np = 5.6 x 1017/ cm³. Value of n¡ at T = 300 K is 1.5 × 1010 / cm³ . Calculate %3D (i) built in potential Vbi (ii) total depletion width W in µm (iii) the depletion capacitance in F/cm? For the equations, look for relevant equations from the textbook.
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