18 The circuit of Figure P11.18 is called a sourcefollower, and acts as a voltage-controlled currentsource (VCCS).12 V a. Determine I, if VG = 10 V, R1 = 2 2, K =0.5 A/V?, Vr = 4 V.b. If the power rating of the MOSFET is 50 W, howsmall can Rz be?

Given data: VG=10 VRL=2 ΩVT=4 V a) The expression for the gate overdrive voltage is given as,…

Answered: 18 The circuit of Figure P11.18 is…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Design a voltage-divider bias network using a supply of 18 V, a transistor with a beta of 110, and an operating point of Ico = 6 mA and VCEQ = 4 V. Choose VE = 1/8 Vcc. %3D %3D Use BRE = 10R2. %3D 1. How much is the emitter voltage?
%3D = 13 volts, Rg = 500 KN, Rc = 6 KN and ß = 120. Assume Transistor is Silicon, VBE=0.7v. For the given circuit, Vcc +Vcc Rc RB VCE V BE a Compute for the base current Q-point, IBq (in Amperes): b. Compute for the collector current Q-point, Ico (in Amperes): c. Compute for the collector-to-emitter voltage, VCEQ (in Volts): d. Draw the DC load line with the axes and the points labeled.
3. Refer to the Characteristic curve shown in Figure I a. Draw a load line on the characteristics determined by VE = 24 V and = 3k for a fixed bias configuration. Rc b. Choose an operating point midway between cutoff and saturation. Determine the value of Rg to establish the resulting operating point. c. What are the resulting values of Ico and VCEQ? d. What is the value of ẞ at the operating point? e. What is the saturation, Icsat current for the design f. What is the dc power dissipated by the device at the operating point? g. What is the power supplied by Vcc h. Determine the power dissipated by the resistive elements Vcc ac input o signal HH C₁ Ra Is 'c}+₁ Rc VBEE Ic HE C₂ VCE ac - output signal
In the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a co
• For the circuit shown in Figure C3 • Draw the DC load line in the Graph C3 • Calculate the Q point if the zero signal base current is 65 µA and a = 0.950. Ic i) In the circuit given VCE = Vcc - ICRC Ic = Vcc / Rc (point A) When VCE= Ov; VCE R1 5kQ When Ic =0mA; VCE =Vcc ( point B) lo Signal V BB Vcc 12 v
Elecronics Engineering
Q4. For the circuit shown in Figure Q4: i) What is the type of MOSFET and the amplifier configuration? ii) Find the Q-point (Ip and Vps) iii) What is the device transconductance, gm? iv) What are the voltage gain and output voltage? v) Draw the input /output voltage waveforms showing the phase relationship between them. Be sure to label them properly. +20V IDON = 15 mA@ VcsON = 6V VGSTH = 1V 1kQ Rp C2 10M2 Ro1 out Vin 3.3MQ Ra, 47003 Rs 50mV Figure Q4
An enhancement type N-MOSFET with VT = 2 V that conducts a current ID = 5 mA for VGS = 4 V and VDS = 5 V. What is the value of ID for VGS = 3 V and VDS = 6 V?
A. Given Vcc= 10V, VEE=-10V, IEE = 1 mA, Rc = 10 kW, VBEon = 0.7V. Determine IC1, VCE1 and VCE2 for the following common mode inputs: 1. Vcm = 0V 2. Vcm = 5V 3. Vcm = -5V B. Analyze what is happening to the VCE for the different common mode voltages. You may relate it to the supplies.
For the given circuit, Vcc = 19 volts, Rg = 900 KN, Rc = 8 KN, RE = 3 KN and B = 100. Assume Transistor is Silicon, VBE=0.7 volts. Vcc RC RB RE a. Compute for the base current Q-point, IBa (in Amperes) [ b. Compute for the collector current Q-point, Ica (in Amperes). c. Compute for the collector-to-emitter voltage, VCEQ (in Volts) d. Draw the Load Line, with details.'
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18 The circuit of Figure P11.18 is called a source follower, and acts as a voltage-controlled current source (VCCS). 12 V a. Determine I, if VG = 10 V, R1 = 2 2, K = 0.5 A/V?, Vr = 4 V. b. If the power rating of the MOSFET is 50 W, how small can Rz be?