*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc =21V and RE = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- %3D Ic(mA) 110 µ 10 80 μΑ 9 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 µA 4 3 +20 µA 2 10 LA 5 10 15 20 25 30 VCE (V) FIG. 4.121

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please just solve option c

*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura-
tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V.
a. Rcif Vcc = 21V and Rg = 1.2 kN.
b. Bat the operating point.
c. Rg.
d. Power dissipated by the transistor.
e. Power dissipated by the resistor Rc-
Ic(mA)
110 µ
10
80 μΑ
70 μΑ
60 μΑ
7
50 µA
6.
40 μΑ
30 μ.
4
3
20 HA
2
10 µA
5
10
15
20
25
30
VCE (V)
FIG. 4.121
Transcribed Image Text:*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc = 21V and Rg = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- Ic(mA) 110 µ 10 80 μΑ 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 μ. 4 3 20 HA 2 10 µA 5 10 15 20 25 30 VCE (V) FIG. 4.121
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