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*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc =21V and RE = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- %3D Ic(mA) 110 µ 10 80 μΑ 9 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 µA 4 3 +20 µA 2 10 LA 5 10 15 20 25 30 VCE (V) FIG. 4.121

*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc =21V and RE = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- %3D Ic(mA) 110 µ 10 80 μΑ 9 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 µA 4 3 +20 µA 2 10 LA 5 10 15 20 25 30 VCE (V) FIG. 4.121

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc = 21V and Rg = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- Ic(mA) 110 µ 10 80 μΑ 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 μ. 4 3 20 HA 2 10 µA 5 10 15 20 25 30 VCE (V) FIG. 4.121
Transcribed Image Text:*13. Using the characteristics of Fig. 4.121, determine the following for an emitter-bias configura- tion if a Q-point is defined at Ico = 4 mA and VCE, = 10 V. a. Rcif Vcc = 21V and Rg = 1.2 kN. b. Bat the operating point. c. Rg. d. Power dissipated by the transistor. e. Power dissipated by the resistor Rc- Ic(mA) 110 µ 10 80 μΑ 70 μΑ 60 μΑ 7 50 µA 6. 40 μΑ 30 μ. 4 3 20 HA 2 10 µA 5 10 15 20 25 30 VCE (V) FIG. 4.121
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