Subject: Electronic engineering 13. The threshold voltage for germanium diode is,14 Capau' tonceValve in forward biased is(more/Less)for aas compaved toTOverse biased coeli t'onpndiode15. * Increased do ping Levelin apn diode leadsto(inereased/deeveased/s0me)breakdown voltoge.16 When thewTT ent through, andis a gtraight dine,graphbotweenvoktage acrossa devicethedeviceis referred to as(eorear/ non Linear/Activel passive)device.17.pn diode o beys ohmsLaw. ( Tree/ False).Cinereases/18.Increesed doping Leveldemcases) the width of deple teon daye.19. A zener diodeis u sed as(reetefien/regulator/amplifies)·20. The doping Level in a zener diode isLess/ more/ same) than that of a pn diode.is alwaysbiascol .21.A zener diode22.In the breakdawn region, azener di'ode behaves(volloge/conent)likeconstantSOUree.23. If theac input to a half uave rectife er is anTms value of 400Dvolus, then diode PIV atingノisThere is a need of transformer for( halt uawe, centre-kap fll wave, bridge) rectifrer,24.

13) Threshold voltage for germanium diode is 0.3 volt. 14) Because diffusion capacitance is created…

13. The threshold voltage tor germanium diode is. 14 Capau tanee valve in forwavd biaged is (more/Less) as compaved 1o reverse biased comlit on for a pn diode . 15. * Increased doping Level in a pn diode leads 1s. to (increased/deeveased/some) breakdown vo tage . 16 When the graph between aeross wTTent through, ard is a ztraight line, voktage a device the device Linear/non Linear/ is referred to as Activel passive) device. obeys ohms Law. ( True/ False). Cinereases/ 17. *7: pn diode 18 Inereesed doping Level decmcases) the width of deple teon layer.

13. The threshold voltage tor germanium diode is. 14 Capau tanee valve in forwavd biaged is (more/Less) as compaved 1o reverse biased comlit on for a pn diode . 15. * Increased doping Level in a pn diode leads 1s. to (increased/deeveased/some) breakdown vo tage . 16 When the graph between aeross wTTent through, ard is a ztraight line, voktage a device the device Linear/non Linear/ is referred to as Activel passive) device. obeys ohms Law. ( True/ False). Cinereases/ 17. *7: pn diode 18 Inereesed doping Level decmcases) the width of deple teon layer.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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