13. The threshold voltage tor germanium diode is. 14 Capau tanee valve in forwavd biaged is (more/Less) as compaved 1o reverse biased comlit on for a pn diode . 15. * Increased doping Level in a pn diode leads 1s. to (increased/deeveased/some) breakdown vo tage . 16 When the graph between aeross wTTent through, ard is a ztraight line, voktage a device the device Linear/non Linear/ is referred to as Activel passive) device. obeys ohms Law. ( True/ False). Cinereases/ 17. *7: pn diode 18 Inereesed doping Level decmcases) the width of deple teon layer.
13. The threshold voltage tor germanium diode is. 14 Capau tanee valve in forwavd biaged is (more/Less) as compaved 1o reverse biased comlit on for a pn diode . 15. * Increased doping Level in a pn diode leads 1s. to (increased/deeveased/some) breakdown vo tage . 16 When the graph between aeross wTTent through, ard is a ztraight line, voktage a device the device Linear/non Linear/ is referred to as Activel passive) device. obeys ohms Law. ( True/ False). Cinereases/ 17. *7: pn diode 18 Inereesed doping Level decmcases) the width of deple teon layer.
Introductory Circuit Analysis (13th Edition)
13th Edition
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Question
Subject: Electronic engineering
![13. The threshold voltage for germanium diode is,
14 Capau' tonce
Valve in forward biased is
(more/Less)
for a
as compaved to
TOverse biased coeli t'on
pn
diode
15. * Increased do ping Level
in a
pn diode leads
to
(inereased/deeveased/s0me)
breakdown voltoge.
16 When the
wTT ent through, and
is a gtraight dine,
graph
botween
voktage across
a device
the
device
is referred to as
(eorear/ non Linear/
Activel passive)
device.
17.
pn diode o beys ohms
Law. ( Tree/ False).
Cinereases/
18.
Increesed doping Level
demcases) the width of deple teon daye.
19. A zener diode
is u sed as
(reetefien/
regulator/amplifies)·
20. The doping Level in a zener diode is
Less/ more/ same) than that of a pn diode.
is always
biascol .
21.
A zener diode
22.
In the breakdawn region, a
zener di'ode behaves
(volloge/conent)
like
constant
SOUree.
23. If the
ac input to a half uave rectife er is an
Tms value of 400D
volus, then diode PIV ating
ノ
is
There is a need of transformer for
( halt uawe, centre-kap fll wave, bridge) rectifrer,
24.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F5ce62b2f-f7a3-4834-8e6f-9676a63f98b5%2Fa139b0f2-0f17-4c69-b290-a86cc2464203%2Fdjylkdd_processed.jpeg&w=3840&q=75)
Transcribed Image Text:13. The threshold voltage for germanium diode is,
14 Capau' tonce
Valve in forward biased is
(more/Less)
for a
as compaved to
TOverse biased coeli t'on
pn
diode
15. * Increased do ping Level
in a
pn diode leads
to
(inereased/deeveased/s0me)
breakdown voltoge.
16 When the
wTT ent through, and
is a gtraight dine,
graph
botween
voktage across
a device
the
device
is referred to as
(eorear/ non Linear/
Activel passive)
device.
17.
pn diode o beys ohms
Law. ( Tree/ False).
Cinereases/
18.
Increesed doping Level
demcases) the width of deple teon daye.
19. A zener diode
is u sed as
(reetefien/
regulator/amplifies)·
20. The doping Level in a zener diode is
Less/ more/ same) than that of a pn diode.
is always
biascol .
21.
A zener diode
22.
In the breakdawn region, a
zener di'ode behaves
(volloge/conent)
like
constant
SOUree.
23. If the
ac input to a half uave rectife er is an
Tms value of 400D
volus, then diode PIV ating
ノ
is
There is a need of transformer for
( halt uawe, centre-kap fll wave, bridge) rectifrer,
24.
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