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12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of NA =1 x 10 cm-3 on the p-side and Np = 2 x 10 cm3 on the n-side. Carrier lifetimes are given as T, = 10 °s and T, = 10 s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, a = -rp- Give your answer in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 V, calculate the minority carrier concentration, P, at the edge of the depletion region on the n-side, r = n- Give your answer in unit of cm 3. Answers within 5% error will be considered correct. Enter answer here

12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of NA =1 x 10 cm-3 on the p-side and Np = 2 x 10 cm3 on the n-side. Carrier lifetimes are given as T, = 10 °s and T, = 10 s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, a = -rp- Give your answer in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 V, calculate the minority carrier concentration, P, at the edge of the depletion region on the n-side, r = n- Give your answer in unit of cm 3. Answers within 5% error will be considered correct. Enter answer here

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of NA =1 × 10 cm³ on the p-side and Np = 2 x 101 cm 3 on the n-side. Carrier lifetimes are given as T, = 10 ®s and T, = 10-s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, a = -1p- Give your answer in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 calculate the minority carrier concentration, Pn, at the edge of the depletion region on the n-side, a = In- Give your answer in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 15. Under a forward bias of 0.6 V, calculate the current density, Jotai, in unit of A/cm?. Answers within 10% eror will be considered correct. Enter answer here
Transcribed Image Text:12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of NA =1 × 10 cm³ on the p-side and Np = 2 x 101 cm 3 on the n-side. Carrier lifetimes are given as T, = 10 ®s and T, = 10-s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, a = -1p- Give your answer in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 calculate the minority carrier concentration, Pn, at the edge of the depletion region on the n-side, a = In- Give your answer in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 15. Under a forward bias of 0.6 V, calculate the current density, Jotai, in unit of A/cm?. Answers within 10% eror will be considered correct. Enter answer here
16. Under a forward bias of 0.6 V, calculate the position at which the minority carrier current density is equal to the majority carrier current density. Hint 1: See the following video. Currents in pn Junction: total current • f we plot the total electron and hole currents, Total current J,(2) Distance Drvice Electronies for integrated Circult by RichardS. Muler and Theodore L Kamins y of Colora 0:30 I 5:56 Hint 2: Note that in an ideal pn junction (with long quasi-neutral regions), each side has 3 current components, minority carrier diffusion current, majority carrier recombination current, and majority carrier current for injection into the other side. Since the n-side is more heavily doped than the p-side in this problem, this condition is satisfied only on the n-side. That is, the electron recombination-injection currents becomes equal to the hole diffusion current at some point in the n-side. In the p-side, hole recombination-injection current is never equal to the electron diffusion current. Give your answer in unit of um. Answers within 5% error will be considered correct. Enter answer here
Transcribed Image Text:16. Under a forward bias of 0.6 V, calculate the position at which the minority carrier current density is equal to the majority carrier current density. Hint 1: See the following video. Currents in pn Junction: total current • f we plot the total electron and hole currents, Total current J,(2) Distance Drvice Electronies for integrated Circult by RichardS. Muler and Theodore L Kamins y of Colora 0:30 I 5:56 Hint 2: Note that in an ideal pn junction (with long quasi-neutral regions), each side has 3 current components, minority carrier diffusion current, majority carrier recombination current, and majority carrier current for injection into the other side. Since the n-side is more heavily doped than the p-side in this problem, this condition is satisfied only on the n-side. That is, the electron recombination-injection currents becomes equal to the hole diffusion current at some point in the n-side. In the p-side, hole recombination-injection current is never equal to the electron diffusion current. Give your answer in unit of um. Answers within 5% error will be considered correct. Enter answer here
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