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= 11.) (Neamen: Problem 7.18) An ideal one sided silicon np junction has Na 50 Na. The built-in potential barrier is 0.752V. The maximum electric field in the function is |Ē|max = 1.14 × 105 V/cm when the reverse bias voltage is 10V. The junction is at room temperature, T = 300K. Determine (a) Na and Na (b) xp assuming a 10V reverse-bias voltage (c) C' (the capacitance per area) for a 10V reverse bias. Give your answer in units of F/cm².

= 11.) (Neamen: Problem 7.18) An ideal one sided silicon np junction has Na 50 Na. The built-in potential barrier is 0.752V. The maximum electric field in the function is |Ē|max = 1.14 × 105 V/cm when the reverse bias voltage is 10V. The junction is at room temperature, T = 300K. Determine (a) Na and Na (b) xp assuming a 10V reverse-bias voltage (c) C' (the capacitance per area) for a 10V reverse bias. Give your answer in units of F/cm².

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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11.) (Neamen: Problem 7.18) An ideal one sided silicon np junction has N₁ = 50 Na. The built-in potential barrier is 0.752V. The maximum electric field in the function 1.14 × 105 V/cm when the reverse bias voltage is 10V. The junction is at room temperature, T = 300K. Determine is Emax = (a) Na and Na (b) xp assuming a 10V reverse-bias voltage. (c) C' (the capacitance per area) for a 10V reverse bias. Give your answer in units of F/cm².
Transcribed Image Text:11.) (Neamen: Problem 7.18) An ideal one sided silicon np junction has N₁ = 50 Na. The built-in potential barrier is 0.752V. The maximum electric field in the function 1.14 × 105 V/cm when the reverse bias voltage is 10V. The junction is at room temperature, T = 300K. Determine is Emax = (a) Na and Na (b) xp assuming a 10V reverse-bias voltage. (c) C' (the capacitance per area) for a 10V reverse bias. Give your answer in units of F/cm².
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