10/11 The first step in the production of high purity silicon for The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2{s) + 2C(s) –→ Si(s) + 2CO(g) A H° = 689.9 kJ semiconductors is represented by this equation: SIO2(s) + 2C( Si(s) + 2CO(g) A Hº = 689.9 kJ Find A Srxn° for the production of pure silicon, given the following data: S° for C = 5.7 J/mol*K, for CO = 197.6 J/mol*K, for Si = 18.8 Using the value of A Srxnº you calculated from question 10, determine A G° for the reaction at 25 °C. J/mol*K and for SIO2 = 41.8 J/mol*K. O J/mol*K O 329.1 kJ/mol 360.8 J/mol"K 582.3 kJ/mol O 2314 J/mol*K O O KJ/mol O -360.8 J/mol*K O 106.8 kJ/mol O 168.9 J/mol*K -106.8 kJ/mol 33. The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2(s) + 2C(s) – Si(s) + 2CO(g) A H° = 689.9 kJ Using the value of A Srxn you calculated from question 10 and/or the value of A G° for the reaction at 25 °C you found in question 11, find the minimum temperature in °C at which this reaction is spontaneous. Assume that A H° and A Sº do not vary with temperature. -271.2 oC 1.912 oC 1639 oC 1912 oC 1614 oC

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10/11
The first step in the production of high purity silicon for
The first step in the production of high purity silicon for
semiconductors is represented by this equation: SiO2{s) + 2C(s)
Si(s) + 2CO(g) A H° = 689.9 kJ
semiconductors is represented by this equation: SIO2(s) + 2C(
Si(s) + 2CO(g) A H° = 689.9 kJ
Find A Srxn° for the production of pure silicon, given the following
data: S° for C = 5.7 J/mol*K, for CO = 197.6 J/mol*K, for Si = 18.8
Using the value of A Srxnº you calculated from question 10,
determine A G° for the reaction at 25 °C.
J/mol*K and for SiO2 = 41.8 J/mol*K.
O O J/mol*K
329.1 kJ/mol
O 360.8 J/mol*K
582.3 kJ/mol
O 2314 J/mol*K
O O kJ/mol
O -360.8 J/mol*K
O 106.8 kJ/mol
O 168.9 J/mol*K
O -106.8 kJ/mol
33.
The first step in the production of high purity silicon for
semiconductors is represented by this equation: SiO2(s) + 2C(s)
Si(s) + 2CO(g) A Hº = 689.9 kJ
%3D
Using the value of A Srxn you calculated from question 10 and/or
the value of A G° for the reaction at 25 °C you found in question 11,
fınd the minimum temperature in °C at which this reaction is
spontaneous. Assume that A H° and A Sº do not vary with
temperature.
-271.2 oC
1.912 oC
1639 oC
1912 oC
1614 oC
Transcribed Image Text:10/11 The first step in the production of high purity silicon for The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2{s) + 2C(s) Si(s) + 2CO(g) A H° = 689.9 kJ semiconductors is represented by this equation: SIO2(s) + 2C( Si(s) + 2CO(g) A H° = 689.9 kJ Find A Srxn° for the production of pure silicon, given the following data: S° for C = 5.7 J/mol*K, for CO = 197.6 J/mol*K, for Si = 18.8 Using the value of A Srxnº you calculated from question 10, determine A G° for the reaction at 25 °C. J/mol*K and for SiO2 = 41.8 J/mol*K. O O J/mol*K 329.1 kJ/mol O 360.8 J/mol*K 582.3 kJ/mol O 2314 J/mol*K O O kJ/mol O -360.8 J/mol*K O 106.8 kJ/mol O 168.9 J/mol*K O -106.8 kJ/mol 33. The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2(s) + 2C(s) Si(s) + 2CO(g) A Hº = 689.9 kJ %3D Using the value of A Srxn you calculated from question 10 and/or the value of A G° for the reaction at 25 °C you found in question 11, fınd the minimum temperature in °C at which this reaction is spontaneous. Assume that A H° and A Sº do not vary with temperature. -271.2 oC 1.912 oC 1639 oC 1912 oC 1614 oC
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