1. Use this information to answer Question 1-3: Consider a contact between gold and n-type silicon doped with Np =1 × 1015cm-3. The work function of gold is Þ Au = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T = 300 K. Calculate the barrier height, ØB, in unit of V. Answers within 5% error will be considered correct. Enter answer here 2. Calculate depletion region width, æD, in unit of um. Answers within 5% error will be considered correct. Enter answer here

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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1. Use this information to answer Question 1-3:
Consider a contact between gold and n-type silicon doped with Np =1 × 1015cm-3. The work function of gold is
Þ Au = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T = 300 K.
Calculate the barrier height, ØB, in unit of V.
Answers within 5% error will be considered correct.
Enter answer here
2. Calculate depletion region width, æD, in unit of um.
Answers within 5% error will be considered correct.
Enter answer here
3. Calculate maximum electric field, E maz, in unit of V/cm.
Answers within 5% error will be considered correct.
Enter answer here
Transcribed Image Text:1. Use this information to answer Question 1-3: Consider a contact between gold and n-type silicon doped with Np =1 × 1015cm-3. The work function of gold is Þ Au = 4.8 V and the electron affinity of silicon is Xsi = 4.05 V. T = 300 K. Calculate the barrier height, ØB, in unit of V. Answers within 5% error will be considered correct. Enter answer here 2. Calculate depletion region width, æD, in unit of um. Answers within 5% error will be considered correct. Enter answer here 3. Calculate maximum electric field, E maz, in unit of V/cm. Answers within 5% error will be considered correct. Enter answer here
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