1. The electron concentration in silicon at T = 300 K is n = 5x10¹ cm 3. Is it n or p type semiconductor? n₁ = P₁= 5×10¹6 cm³. 2. Find out the values of n and p for silicon at T= 300K if the Fermi energy is 0.22 eV above the valence band. Bandgap of silicon is 1.12 eV. Nv 5×1019 cm³ and Ne= 5x10¹8 cm³. = 3. It is given that Fermi level lie at valence band edge at T = 300 Kin silicon. Determine the concentration of hole? 4. Consider silicon at T = 300 K which has n=2.4×10¹6 cm³ and Nc = 5x100 cm3. Determine Ec- Ep
1. The electron concentration in silicon at T = 300 K is n = 5x10¹ cm 3. Is it n or p type semiconductor? n₁ = P₁= 5×10¹6 cm³. 2. Find out the values of n and p for silicon at T= 300K if the Fermi energy is 0.22 eV above the valence band. Bandgap of silicon is 1.12 eV. Nv 5×1019 cm³ and Ne= 5x10¹8 cm³. = 3. It is given that Fermi level lie at valence band edge at T = 300 Kin silicon. Determine the concentration of hole? 4. Consider silicon at T = 300 K which has n=2.4×10¹6 cm³ and Nc = 5x100 cm3. Determine Ec- Ep
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Transcribed Image Text:1. The electron concentration in silicon at T = 300 K is n = 5×10¹ cm
3. Is it n or p type semiconductor? n₁ = P₁= 5x10¹6 cm³.
2. Find out the values of n and p for silicon at T= 300K if the Fermi
energy is 0.22 eV above the valence band. Bandgap of silicon is
1.12 eV. Nv 5x1019 cm³ and Ne= 5x10¹8 cm3,
3.
It is given that Fermi level lie at valence band edge at T = 300 Kin
silicon. Determine the concentration of hole?
4.
Consider silicon at T = 300 K which has n = 2.4×10¹6 cm³ and Nc =
5x1020 cm3. Determine Ec- Ep
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