# CMOS NAND Gate Analysis## Problem StatementThe circuit in Figure 1 is a 3-input NAND gate. Assume the following parameters:- \( V_{DD} = 1.5 \, \text{V} \)- \( K_n' = 100 \, \mu\text{A/V}^2 \)- \( V_{tn} = 0.4 \, \text{V} \)- \( (W/L)_n = 30 \)- \( K_p' = 60 \, \mu\text{A/V}^2 \)- \( V_{tp} = -0.4 \, \text{V} \)- \( (W/L)_p = 20 \)### Tasks**a.** If the load capacitance is 100 fF, compute the propagation delay for each transition shown in the following table using the average current approximation method. Neglect the body effect.**b.** Based on the propagation delays calculated in part a, determine the effective output resistance of the NAND gate for each transition.### Table of Transitions| **Transition (ABC)** | **Propagation Delay** | **Effective Output Resistance** ||----------------------|-----------------------|--------------------------------|| 000 → 111 | | || 111 → 110 | | || 111 → 100 | | || 111 → 000 | | |### Figure 1The diagram depicts a 3-input CMOS NAND gate. It consists of:- Three PMOS transistors in parallel connected to \( V_{DD} \) and the output \( Z \).- Three NMOS transistors in series connected to ground and the output \( Z \).- Inputs \( A \), \( B \), and \( C \) control the gates of the transistors.The diagram illustrates the configuration commonly used in CMOS NAND gates to perform the logical NAND function.

Given Circuit, Given Data, VDD = 1.5 V Kn' = 100 μA/V2 Vth = 0.4 V (W/L)n = 30 Kp' = 60 μA/V2 Vtp…

1. The circuit in Figure 1 is a 3 input NAND gate. Assume that VDD=1.5 V, Kn=100 UA/V², Vtn=0.4 V, (W/L)n-30, K'p=60 UA/V², Vtp=-0.4 V, (W/L),=20. a. If the load capacitance is 100fF, compute the propagation delay for each transition shown in the following table. Use the average current approximation method and neglect the body effect. b. Based on the propagation delays calculated in part a, find the effective output resistance of the NAND gate for each transition shown in the table blow.

1. The circuit in Figure 1 is a 3 input NAND gate. Assume that VDD=1.5 V, Kn=100 UA/V², Vtn=0.4 V, (W/L)n-30, K'p=60 UA/V², Vtp=-0.4 V, (W/L),=20. a. If the load capacitance is 100fF, compute the propagation delay for each transition shown in the following table. Use the average current approximation method and neglect the body effect. b. Based on the propagation delays calculated in part a, find the effective output resistance of the NAND gate for each transition shown in the table blow.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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