1. Show how to find the answer.Table 1 is used to answer question 1.MaterialsEg (eV) B (cm°K³/2Silicon (Si)1.15.23x1015Gallium Arsenide1.42.10x1014(GaAs)Germanium (Ge)0.661.66x1015Calculate the carrier concentrationof Germanium (GE) at 300 °K using the data in Table1 wher ni = BTe- and. K=P6x10-SK =?.6x10-54. Calculate the Built-in Potential Barrier of a Germanium (GE)P-N junction at a temperature (T = 300 °K) with N= 10 particles/cm,ISNa= 10" particles /cm and V,= 2.60x10. with the n; Value trom clause 11When Voi - V, Tnl Na Ndn?

Answered: Image /qna-images/answer/b000d221-f739-45bd-850f-f7df9c2aa0a0.jpg

1. Show how to find the answer. Table 1 is used to answer question 1. Materials Eg (eV)B (cm³K 3/2 Silicon (Si) 1.1 5.23x1015 Gallium Arsenide 1.4 2.10x1014 (GaAs) Germanium (Ge) 0.66 1.66x1015 Calculate the carrier concentration of Germanium (GE) at 300 °K using the data in Table 1 wheri ni = B and. K=P:6x10-5 Calculate the Built-in Potential Barrier of a Germanium (GE) P-N junction at a temperature (T = 300 °K) with N 10 particles/cm, NF 10" particles/cm and V,= 2.60x10. with the n; Value trom clause 1 •2 When Voi e ķ Tn( Na Nd

1. Show how to find the answer. Table 1 is used to answer question 1. Materials Eg (eV)B (cm³K 3/2 Silicon (Si) 1.1 5.23x1015 Gallium Arsenide 1.4 2.10x1014 (GaAs) Germanium (Ge) 0.66 1.66x1015 Calculate the carrier concentration of Germanium (GE) at 300 °K using the data in Table 1 wheri ni = B and. K=P:6x10-5 Calculate the Built-in Potential Barrier of a Germanium (GE) P-N junction at a temperature (T = 300 °K) with N 10 particles/cm, NF 10" particles/cm and V,= 2.60x10. with the n; Value trom clause 1 •2 When Voi e ķ Tn( Na Nd

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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