1. If the Ge is doped n-type with a donor concentration of 5x10 cm and all donors become ionised, what is the conduction band to Fermi level separation? s. What is the valence band to Fermi level separation for the n-type Ge? 5. If the n-type Ge is brought into contact with p-type Ge to form a pn junction, sketch the band diagram of the resulting diode. Label Ec, Ev, Er, the n-region, the p-region, the depletion region and the potential barrier of the diode. Show the changes that occur if a forward bias is applied to the diode.

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4. If the Ge is doped n-type with a donor concentration of 5x1015 cm3 and
all donors become ionised, what is the conduction band to Fermi level
separation?
5. What is the valence band to Fermi level separation for the n-type Ge?
6. If the n-type Ge is brought into contact with p-type Ge to form a pn
junction, sketch the band diagram of the resulting diode. Label Ec, Ev, Er,
the n-region, the p-region, the depletion region and the potential barrier
of the diode. Show the changes that occur if a forward bias is applied to
the diode.
Transcribed Image Text:4. If the Ge is doped n-type with a donor concentration of 5x1015 cm3 and all donors become ionised, what is the conduction band to Fermi level separation? 5. What is the valence band to Fermi level separation for the n-type Ge? 6. If the n-type Ge is brought into contact with p-type Ge to form a pn junction, sketch the band diagram of the resulting diode. Label Ec, Ev, Er, the n-region, the p-region, the depletion region and the potential barrier of the diode. Show the changes that occur if a forward bias is applied to the diode.
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