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1. Given the BJT transistor characteristics of Fig. 1: (a) Draw a load line on the characteristics determined by E=21 V and RC = 3 k for a fixed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of RB to establish the resulting operating point. (c) What are the resulting values of ICQ and VCEQ?

1. Given the BJT transistor characteristics of Fig. 1: (a) Draw a load line on the characteristics determined by E=21 V and RC = 3 k for a fixed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of RB to establish the resulting operating point. (c) What are the resulting values of ICQ and VCEQ?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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110 μA 100 μA 20 LA 80 GA 70 A GUA SOLA 40LA 30 A * 20 JA 10 μA
Transcribed Image Text:110 μA 100 μA 20 LA 80 GA 70 A GUA SOLA 40LA 30 A * 20 JA 10 μA
1. Given the BJT transistor characteristics of Fig. 1: (a) Draw a load line on the characteristics determined by E =21 V and RC = 3 k for a fixed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of RB to establish the resulting operating point. (c) What are the resulting values of ICQ and VCEQ? (d) What is the value of f at the operating point? (e) What is the value of a defined by the operating point? (f) What is the saturation (ICsat) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the dc power dissipated by the device at the operating point? (1) What is the power supplied by VCC? (1) Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 10 9 M T 6n 477 3 2 - 0 le (mA) 5 2 10 110 μA 100 μA 15 90 μLA 80 μA 70 μA 8 20 60 μA 50 μA 40 μA 30 μLA 25 20 μA 10 μ 7-0μA 30 VCE (V) Fig.1 Using the
Transcribed Image Text:1. Given the BJT transistor characteristics of Fig. 1: (a) Draw a load line on the characteristics determined by E =21 V and RC = 3 k for a fixed bias configuration. (b) Choose an operating point midway between cutoff and saturation. Determine the value of RB to establish the resulting operating point. (c) What are the resulting values of ICQ and VCEQ? (d) What is the value of f at the operating point? (e) What is the value of a defined by the operating point? (f) What is the saturation (ICsat) current for the design? (g) Sketch the resulting fixed-bias configuration. (h) What is the dc power dissipated by the device at the operating point? (1) What is the power supplied by VCC? (1) Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 10 9 M T 6n 477 3 2 - 0 le (mA) 5 2 10 110 μA 100 μA 15 90 μLA 80 μA 70 μA 8 20 60 μA 50 μA 40 μA 30 μLA 25 20 μA 10 μ 7-0μA 30 VCE (V) Fig.1 Using the
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