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1. For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-19, ni = 1.5*1010 carriers/cm3 2. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500um thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 3. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3*10¹5 cm³³ K-³/², E₁ = 1.12, k = 8.62*105 eV/K 4. Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and

1. For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-19, ni = 1.5*1010 carriers/cm3 2. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500um thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 3. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3*10¹5 cm³³ K-³/², E₁ = 1.12, k = 8.62*105 eV/K 4. Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and

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1. For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-19, ni = 1.5*1010 carriers/cm3 2. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500um thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 3. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3*10¹5 cm ³ K-³/², E₁ = 1.12, k = 8.62*10-5 eV/K 4. Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
Transcribed Image Text:1. For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-19, ni = 1.5*1010 carriers/cm3 2. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500um thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 3. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3*10¹5 cm ³ K-³/², E₁ = 1.12, k = 8.62*10-5 eV/K 4. Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
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