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1. Figure 1 shows the partial datasheet for a 2N5458 JFET. Based on datasheet in Figure I obtain the value of typical Inss and maximum Vosom Use these values to calculate the drain current for Vos -0 V, -2 V, and -3 V. 2. JFET biasing is used to select the proper de gate-to-source voltage to establish a desired value of drain current and thus a proper Q-point. To illustrate JFET biasing circuit, sketch the self-biased n-channel JFET. If the given the parameter values of lb-8 mA, Rp = 2.0 ka, Ra = 10 MN, Rs = 280 2 and VDD =24 V, determine Vps and Vos

1. Figure 1 shows the partial datasheet for a 2N5458 JFET. Based on datasheet in Figure I obtain the value of typical Inss and maximum Vosom Use these values to calculate the drain current for Vos -0 V, -2 V, and -3 V. 2. JFET biasing is used to select the proper de gate-to-source voltage to establish a desired value of drain current and thus a proper Q-point. To illustrate JFET biasing circuit, sketch the self-biased n-channel JFET. If the given the parameter values of lb-8 mA, Rp = 2.0 ka, Ra = 10 MN, Rs = 280 2 and VDD =24 V, determine Vps and Vos

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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1. Figure 1 shows the partial datasheet for a 2N5458 JFET. Based on datasheet in Figure 1 obtain the value of typical Ipss and maximum VGs(om Use these values to calculate the drain current for Vos -0 V, -2 V, and -3 V. 2. JFET biasing is used to select the proper de gate-to-source voltage to establish a desired value of drain current and thus a proper Q-point. To illustrate JFET biasing circuit, sketch the self-biased n-channel JFET. If the given the parameter values of Ip - 8 mA, Rp = 2.0 ka, Rg = 10 MQ, Rs = 280 2 and Vpp =24 V, determine Vps and Vos
Transcribed Image Text:1. Figure 1 shows the partial datasheet for a 2N5458 JFET. Based on datasheet in Figure 1 obtain the value of typical Ipss and maximum VGs(om Use these values to calculate the drain current for Vos -0 V, -2 V, and -3 V. 2. JFET biasing is used to select the proper de gate-to-source voltage to establish a desired value of drain current and thus a proper Q-point. To illustrate JFET biasing circuit, sketch the self-biased n-channel JFET. If the given the parameter values of Ip - 8 mA, Rp = 2.0 ka, Rg = 10 MQ, Rs = 280 2 and Vpp =24 V, determine Vps and Vos
FIGURE 1 Electrical Characteristics TA2Ciethurated Symbol Min Typ Max Units Туp Маx |Units Parameter Test Conditions OFF CHARACTERISTICS Vas -25 Gate-Source Breakdown Voltage Gate Reverse Current la = 10A, Vos =0 Von =-15 V, Voe =0 Vos = -15 V, Ves =0, Ta 100'C Vog= 15 V. e = 10 NA lass 1.0 -200 -6.0 -7.0 -8.0 nA nA Vasn Gate-Source Cutoff Voltage 5457 5458 5459 0.5 - 1.0 -20 V Vos Gate Source Voitage Vos = 15 V, le = 100 A Vos = 15 V, lo= 200 A Von 15 V, = 400 A 5459 -25 -3.5 4.5 5457 5450 ONCHARACTERISTICS Zero-Gate Voltage Drain Currenit Vos = 15 V, Vas = 0 6.0 9.0 16 loss 5457 1.0 5458 S450 20 4.0 3.0 6.0 9.0 mA mA SMALL SIGNAL CHARACTERISTICS Forward Transter Conductarice Vos= 15 V, Vos =0,1=1.0 KHZ 5457 5000 umhos 5500 umhos 6000 mhos 50 umhos 7.0 pF 3.0 DF 3.0 5458 5459 1000 1500 2000 Output Conductance input Capacitance Reverse Transter Capacitance Vos = 15 V, Vas =0,1= 1,0 kHZ Vos = 15 V, Vas =0, =1.0 MHE Vos = 15 V, Vos =0, 1= 1.0 MH2 Von = 15 V, Vos = 0,1= 1.0 KHZ. Re 1.0 megchm. BW = 1.0 Hz 10 Cas 4.5 1.5 Csa NF Noise Figure * et WMah300 m, Dy Cyes
Transcribed Image Text:FIGURE 1 Electrical Characteristics TA2Ciethurated Symbol Min Typ Max Units Туp Маx |Units Parameter Test Conditions OFF CHARACTERISTICS Vas -25 Gate-Source Breakdown Voltage Gate Reverse Current la = 10A, Vos =0 Von =-15 V, Voe =0 Vos = -15 V, Ves =0, Ta 100'C Vog= 15 V. e = 10 NA lass 1.0 -200 -6.0 -7.0 -8.0 nA nA Vasn Gate-Source Cutoff Voltage 5457 5458 5459 0.5 - 1.0 -20 V Vos Gate Source Voitage Vos = 15 V, le = 100 A Vos = 15 V, lo= 200 A Von 15 V, = 400 A 5459 -25 -3.5 4.5 5457 5450 ONCHARACTERISTICS Zero-Gate Voltage Drain Currenit Vos = 15 V, Vas = 0 6.0 9.0 16 loss 5457 1.0 5458 S450 20 4.0 3.0 6.0 9.0 mA mA SMALL SIGNAL CHARACTERISTICS Forward Transter Conductarice Vos= 15 V, Vos =0,1=1.0 KHZ 5457 5000 umhos 5500 umhos 6000 mhos 50 umhos 7.0 pF 3.0 DF 3.0 5458 5459 1000 1500 2000 Output Conductance input Capacitance Reverse Transter Capacitance Vos = 15 V, Vas =0,1= 1,0 kHZ Vos = 15 V, Vas =0, =1.0 MHE Vos = 15 V, Vos =0, 1= 1.0 MH2 Von = 15 V, Vos = 0,1= 1.0 KHZ. Re 1.0 megchm. BW = 1.0 Hz 10 Cas 4.5 1.5 Csa NF Noise Figure * et WMah300 m, Dy Cyes
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