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1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with ß of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8.

1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with ß of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.
Transcribed Image Text:Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.
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